Lifshitz Transitions Induced by Temperature and Surface Doping in Type-II Weyl Semimetal Candidate Td-WTe2

Zhang, Qihang; Liu, Zhongkai; Sun, Yan; Yang, Haifeng; Jiang, Juan; Mo, Sung -Kwan; Hussain, Zahid; Qian, Xiaofeng; Fu, Liang; Yao, Shuhua; Lu, Minghui; Felser, Claudia; Yan, Binghai; Chen, Yulin; Yang, Lexian

doi:10.1002/pssr.201700209

Title: Lifshitz Transitions Induced by Temperature and Surface Doping in Type-II Weyl Semimetal Candidate T_d-WTe₂

Journal Article · Mon Oct 09 00:00:00 EDT 2017 · Physica Status Solidi rrl

DOI:https://doi.org/10.1002/pssr.201700209· OSTI ID:1530308

Zhang, Qihang ^[1]; Liu, Zhongkai ^[2]; Sun, Yan ^[3]; Yang, Haifeng ^[4]; Jiang, Juan ^[5]; Mo, Sung -Kwan ^[6]; Hussain, Zahid ^[6]; Qian, Xiaofeng ^[7]; Fu, Liang ^[8]; Yao, Shuhua ^[9]; Lu, Minghui ^[9]; Felser, Claudia ^[3]; Yan, Binghai ^[3]; Chen, Yulin ^[10];

^[1]

Tsinghua Univ., Beijing (People's Republic of China)
ShanghaiTech Univ. and CAS-Shanghai Science Research Center, Shanghai (People's Republic of China)
Max Planck Institute for Chemical Physics of Solids, Dresden (Germany)
Univ. of Oxford, Oxford (United Kingdom); Chinese Academy of Sciences, Shanghai (People's Republic of China)
ShanghaiTech Univ. and CAS-Shanghai Science Research Center, Shanghai (People's Republic of China); Univ. of Oxford, Oxford (United Kingdom); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Pohang Accelerator Lab POSTECH, Pohang (Korea)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Texas A&M Univ., College Station, TX (United States)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Nanjing Univ., Nanjing (People's Republic of China)
Tsinghua Univ., Beijing (People's Republic of China); ShanghaiTech Univ. and CAS-Shanghai Science Research Center, Shanghai (People's Republic of China); Univ. of Oxford, Oxford (United Kingdom)

Using high resolution angle‐resolved photoemission spectroscopy, we systematically investigate the electronic structure of T _d ‐WTe ₂ , which has attracted substantial research attention due to its diverse and fascinating properties, especially the predicted type‐II topological Weyl semimetal (TWS) phase. The observed significant lattice contraction and the fact that our ARPES measurements are well reproduced by our ab initio calculations under reduced lattice constants support the theoretical prediction of a type‐II TWS phase in T _d ‐WTe ₂ at temperatures below 10 K. We also investigate the evolution of the electronic structure of T _d ‐WTe ₂ and realize two‐stage Lifshitz transitions induced by temperature regulation and surface modification, respectively. Our results not only shed light on the understanding of the electronic structure of T _d ‐WTe ₂ , but also provide a promising method to manipulate the electronic structures and physical properties of the type‐II TWS T _d ‐ X Te ₂ .

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231; DE‐AC02‐05CH11231

OSTI ID:: 1530308

Alternate ID(s):: OSTI ID: 1398739

Journal Information:: Physica Status Solidi rrl, Vol. 11, Issue 12; ISSN 1862-6254

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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Title: Lifshitz Transitions Induced by Temperature and Surface Doping in Type-II Weyl Semimetal Candidate Td-WTe2

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Title: Lifshitz Transitions Induced by Temperature and Surface Doping in Type-II Weyl Semimetal Candidate T_d-WTe₂