Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

Whitney, William S.; Sherrott, Michelle C.; Jariwala, Deep; Lin, Wei -Hsiang; Bechtel, Hans A.; Rossman, George R.; Atwater, Harry A.

doi:10.1021/acs.nanolett.6b03362

Title: Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

Journal Article · Thu Dec 22 00:00:00 EST 2016 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b03362· OSTI ID:1530266

^[1]; Sherrott, Michelle C. ^[1]; Jariwala, Deep ^[1]; Lin, Wei -Hsiang ^[1]; Bechtel, Hans A. ^[2]; Rossman, George R. ^[1];

^[1]

California Inst. of Technology (CalTech), Pasadena, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. Here, we interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1530266

Journal Information:: Nano Letters, Vol. 17, Issue 1; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 76 works

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