Opto-electronic properties of Co-Zn-Ni-O films deposited by RF-sputtering at ambient-temperature
Co-Zn-Ni-O thin films were grown on glass at ambient temperature (TS < 65 °C) by co- sputtering from Co3O4, ZnO, and NiO targets to determine the structural and opto-electronic properties across the ternary composition space. Compositional domains with spinel, wurtzite rock-salt, and mixed phases were observed, albeit with very weak X-ray diffraction peaks, overall suggesting the likely presence of a co-existent amorphous component. The electrical conductivity had a maximum value of ~35 S/cm that occurs where the optical absorption is also the strongest. The work functions range from 5.0-5.8 eV for all samples, but with no clear composition-based trends. Overall, it appears that optoelectronic properties of the Co-Zn-Ni-O materials are much less sensitive to substrate temperature compared to other p-type oxide semiconductors, resulting in technologically-relevant ambient-temperature-deposited thin films.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1526771
- Alternate ID(s):
- OSTI ID: 1544538
- Report Number(s):
- NREL/JA-5K00-68962; S0925838819319577; PII: S0925838819319577
- Journal Information:
- Journal of Alloys and Compounds, Journal Name: Journal of Alloys and Compounds Vol. 801 Journal Issue: C; ISSN 0925-8388
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- Netherlands
- Language:
- English
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