Mass Enhancement of Two-Dimensional Electrons in Thin Oxide Si-MOSFETs
Journal Article
·
· Journal of Applied Physics
OSTI ID:1524
- Sandia National Laboratories
We report in this paper a study of the effective mass in thin oxide Si-MOSFETs, using the temperature dependence of the Shubnikov-de Haas (SdH) effect and following the methodology developed by Smith and Stiles.
- Research Organization:
- Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1524
- Report Number(s):
- SAND98-2450J; ON: DE00001524
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics
- Country of Publication:
- United States
- Language:
- English
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