Photon-induced suppression of interlayer tunneling in van der Waals heterostructures

Lee, Woo-Ram; Tse, Wang-Kong

doi:10.1103/PhysRevB.99.201403

Photon-induced suppression of interlayer tunneling in van der Waals heterostructures

Journal Article · Mon May 06 00:00:00 EDT 2019 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.99.201403· OSTI ID:1523645

Lee, Woo-Ram ^[1]; Tse, Wang-Kong ^[2]

Univ. of Alabama, Tuscaloosa, AL (United States). Dept. of Physics and Astronomy. Center for Materials for Information Technology; University of Alabama
Univ. of Alabama, Tuscaloosa, AL (United States). Dept. of Physics and Astronomy. Center for Materials for Information Technology

We develop here a theory for interlayer tunneling in van der Waals heterostructures driven under a strong electromagnetic field, using $$\text{graphene}/h{-}\mathrm{BN}/\text{graphene}$$ as a paradigmatic example. Our theory predicts that strong antiresonances appear at bias voltage values equal to an integer multiple of the light frequency. These features are found to originate from photon-assisted resonant tunneling transitions between Floquet sidebands of different graphene layers, and are unique to two-band systems due to the interplay of both intraband and interband tunneling transitions. Our results point to the possibility of tunneling localization in van der Waals heterostructures using strong electromagnetic fields.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Alabama, Tuscaloosa, AL (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0019326

OSTI ID:: 1523645

Alternate ID(s):: OSTI ID: 1510836

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 20 Vol. 99; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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