Point Defects in CdTe Bulk Single Crystals Grown in Cd-Rich Conditions
CdTe materials tend to grow in a Te-rich stoichiometry due to the higher vapor pressure of Cd over Te, making the material p-type. Growing the crystal in an extra Cd environment helps to restore the stoichiometry and changes the material from p-type to semi-insulating or n-type conductivity. The amount of Cd and Te vacancies is expected to change with variations of the stoichiometry. To better understand the effect of stoichiometry on intrinsic defects, we grew a CdTe crystal boule in a Cd-rich conditions using the Vertical Bridgman technique. The electrical properties and defect structures of the resulting sample were compared to a Te-rich sample grown under similar conditions. The point defects were characterized by thermoelectric effect spectroscopy. Analysis suggests that five types of defects were common to both growths whereas two types of defects are associated with the growth stoichiometry.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1514831
- Report Number(s):
- NREL/CP-5K00-68650
- Resource Relation:
- Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25-30 June 2017, Washington, D.C.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method
Final Report: Preparation and Evaluation of N-Type CdSeTe and CdTe as an Absorber in Thin Film PV