Using Surface Engineering to Modulate Superconducting Coplanar Microwave Resonator Performance $${{\tau}}$$
[1];
[1];
[4]
- Naval Research Lab. (NRL), Washington, DC (United States). Materials Science and Technology Division
- Univ. of Maryland, College Park, MD (United States). Lab. of Physical Sciences and Dept. of Physics
- Pontificial Catholic Univ. of Puerto Rico (Puerto Rico)
- Univ. of Maryland, College Park, MD (United States). Lab. of Physical Sciences
Superconducting microwave resonators are important components of superconducting quantum information and astronomy detector systems. Here in this paper, we show how to modify the microwave resonator performance after fabrication through surface engineering. In particular, we focus on titanium nitride (TiN)/silicon (Si) resonators because they have shown potential for achieving high-quality factors (Qis). Depending on the type of surface treatment, chemicalor plasma-based, we found Qis that vary by approximately a factor of 18. We used inductively coupled plasma (ICP) combined with reactive ion etching (RIE) for the plasma surface treatment. We found that the microwave resonator performance depends on the type of plasma environment, such as single gas (oxygen) or gas mixtures [argon/hydrogen (Ar/H2), argon/octafluorocyclobutane (Ar/C4F8), and argon/sulfur hexafluoride (Ar/SF6)], and the plasma processing conditions, such as treatment time, ICP power, and RIE power. Of the plasma surface treatments, the Ar/SF6 environments with no or low ICP power showed the highest potential to improve Qi. The processing conditions determined the chemistry and roughness of the Si and TiN surfaces, TiN film thickness, and the overall TiN/Si resonator structure (edge and sidewall). Our results can be used as a guideline for optimizing the microwave resonator performance using surface treatments.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC52-07NA27344
- OSTI ID:
- 1513127
- Report Number(s):
- LLNL-JRNL-753918; 940465
- Journal Information:
- IEEE Transactions on Applied Superconductivity, Vol. 29, Issue 6; ISSN 1051-8223
- Publisher:
- Institute of Electrical and Electronics Engineers (IEEE)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Plasma-induced damage of GaAs during etching of refractory metal contacts
Plasma-induced-damage of GaAs during etching of refractory metal contacts