Atomic-scale analyses of Nb3Sn on Nb prepared by vapor diffusion for superconducting radiofrequency cavity applications: a correlative study

Lee, Jaeyel; Posen, Sam; Mao, Zugang; Trenikhina, Yulia; He, Kai; Hall, Daniel L.; Liepe, Matthias; Seidman, David N.

doi:10.1088/1361-6668/aaf268

Atomic-scale analyses of Nb₃Sn on Nb prepared by vapor diffusion for superconducting radiofrequency cavity applications: a correlative study

Journal Article · Thu Dec 20 00:00:00 EST 2018 · Superconductor Science and Technology

DOI:https://doi.org/10.1088/1361-6668/aaf268· OSTI ID:1511670

^[1]; Posen, Sam ^[2]; Mao, Zugang ^[3]; Trenikhina, Yulia ^[2]; He, Kai ^[3]; Hall, Daniel L. ^[4]; Liepe, Matthias ^[4]; Seidman, David N. ^[3]

Northwestern Univ., Evanston, IL (United States); Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Northwestern Univ., Evanston, IL (United States)
Cornell Univ., Ithaca, NY (United States)

We report on atomic-scale analyses of the microstructure of an Nb₃Sn coating on Nb, prepared by a vapor diffusion process for superconducting radiofrequency (SRF) cavity applications using transmission electron microscopy, electron backscatter diffraction and first-principles calculations. Epitaxial growth of Nb₃Sn on a Nb substrate is found and four types of orientation relationships (ORs) at the Nb₃Sn/Nb interface are identified by electron diffraction or high-resolution scanning transmission electron microscopy (HR-STEM) analyses. Thin Nb₃Sn grains are observed in regions with a low Sn flux and they have a specific OR: Nb₃Sn (1$$\bar{2}$$0) //Nb ($$\bar{1}$$11) and Nb₃Sn (002) //Nb (0$$\bar{1}$$1) The Nb₃Sn/Nb interface of thin grains has a large lattice mismatch, 12.3%, between Nb(0$$\bar{1}$$1) and Nb₃Sn (002) and a high density of misfit dislocations as observed by HR-STEM. Based on our microstructural analyses of the thin grains, we conclude that the thin regions are probably a result of a slow interfacial migration with this particular OR. The Sn-deficient regions are seen to form initially at the Nb₃Sn/Nb interface and remain in the grains due to the slow diffusion of Sn in bulk Nb₃Sn. The formation of Sn-deficient regions and the effects of interfacial energies on the formation of Sn-deficient regions at different interfaces are estimated by first-principles calculations. The finding of ORs at the Nb₃Sn/Nb interface provides important information about the formation of imperfections in Nb₃Sn coatings, such as large thin-regions and Sn-deficient regions, which are critical to the performance of Nb₃Sn SRF cavities for accelerators.

View Accepted Manuscript (DOE)

Research Organization:: Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)

Grant/Contract Number:: AC02-07CH11359

OSTI ID:: 1511670

Alternate ID(s):: OSTI ID: 1529328
OSTI ID: 22907781

Report Number(s):: FERMILAB-PUB--18-767-TD; FERMILAB-PUB]-18--767-TD; 1718533

Journal Information:: Superconductor Science and Technology, Journal Name: Superconductor Science and Technology Journal Issue: 2 Vol. 32; ISSN 0953-2048

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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