Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Son, Jangyup; Kwon, Junyoung; Kim, SunPhil; Lv, Yinchuan; Yu, Jaehyung; Lee, Jong-Young; Ryu, Huije; Watanabe, Kenji; Taniguchi, Takashi; Garrido-Menacho, Rita; Mason, Nadya; Ertekin, Elif; Huang, Pinshane Y.; Lee, Gwan-Hyoung; M. van der Zande, Arend

doi:10.1038/s41467-018-06524-3

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Journal Article · Fri Sep 28 00:00:00 EDT 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-018-06524-3· OSTI ID:1511448

Son, Jangyup ^[1]; Kwon, Junyoung ^[2]; Kim, SunPhil ^[3]; Lv, Yinchuan ^[3]; Yu, Jaehyung ^[3]; Lee, Jong-Young ^[2]; Ryu, Huije ^[2]; ^[4]; Taniguchi, Takashi ^[4]; Garrido-Menacho, Rita ^[3]; Mason, Nadya ^[3]; Ertekin, Elif ^[3]; Huang, Pinshane Y. ^[3]; ^[2]; M. van der Zande, Arend ^[3]

Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States); None
Yonsei Univ., Seoul (Korea)
Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
National Inst. for Materials Science (NIMS), Tsukuba (Japan)

Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm² V^-1 s^-1 at carrier density of 4 × 10¹² cm^-2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Illinois, Champaign, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0012649

OSTI ID:: 1511448

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 9; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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