Optical Properties of Tensilely Strained Ge Nanomembranes
Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are generally unsuitable for light emitting device applications because of their indirect- bandgap nature. This property currently limits the large-scale integration of electronic and photonic functionalities on Si chips. The introduction of tensile strain in Ge, which has the effect of lowering the direct conduction-band minimum relative to the indirect valleys, is a promising approach to address this challenge. Here we review recent work focused on the basic science and technology of mechanically stressed Ge nanomembranes, i.e., single-crystal sheets with thicknesses of a few tens of nanometers, which can sustain particularly large strain levels before the onset of plastic deformation. These nanomaterials have been employed to demonstrate large strain-enhanced photoluminescence, population inversion under optical pumping, and the formation of direct-bandgap Ge. Furthermore, Si-based photonic-crystal cavities have been developed that can be combined with these Ge nanomembranes without limiting their mechanical flexibility. These results highlight the potential of strained Ge as a CMOS-compatible laser material, and more in general the promise of nanomembrane strain engineering for novel device technologies.
- Research Organization:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- FG02-03ER46028
- OSTI ID:
- 1511044
- Journal Information:
- Nanomaterials, Vol. 8, Issue 6; ISSN 2079-4991
- Publisher:
- MDPICopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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