Strain vs. charge mediated magnetoelectric coupling across the magnetic oxide/ferroelectric interfaces

Paudel, Binod; Vasiliev, Igor; Hammouri, Mahmoud; Karpov, Dmitry; Chen, Aiping; Lauter, Valeria; Fohtung, Edwin

doi:10.1039/C9RA01503E

Title: Strain vs. charge mediated magnetoelectric coupling across the magnetic oxide/ferroelectric interfaces

Journal Article · Mon Apr 29 00:00:00 EDT 2019 · RSC Advances

DOI:https://doi.org/10.1039/C9RA01503E· OSTI ID:1509749

Paudel, Binod ^[1];

^[2]; Hammouri, Mahmoud ^[3]; Karpov, Dmitry ^[4];

^[5]; Lauter, Valeria ^[6];

^[7]

Department of Physics, New Mexico State University, Las Cruces, USA, Center for Integrated Nanotechnologies (CINT)
Department of Physics, New Mexico State University, Las Cruces, USA
Department of Physics, California State University, Los Angeles, USA
Swiss Light Source, Paul Scherrer Institute, Switzerland
Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, USA
Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, USA
Department of Physics, New Mexico State University, Las Cruces, USA, Los Alamos National Laboratory

We utilize polarized neutron reflectometry in consort with ab initio based density functional theory calculations to study interface magnetoelectric coupling across a ferroelectric PbZr_0.2Ti_0.8O₃ and magnetic La_0.67Sr_0.33MnO₃ heterostructure grown on a Nb-doped SrTiO₃ (001) substrate. Functional device working conditions are mimicked by gating the heterostructure with a Pt top electrode to apply an external electric field, which alters the magnitude and switches the direction of the ferroelectric (FE) polarization, across the PZT layer. PNR results show that the gated PZT/LSMO exhibits interfacial magnetic phase modulation attributed to ferromagnetic (FM) to A-antiferromagnetic (A-AF) phase transitions resulting from hole accumulation. When the net FE polarization points towards the interface (positive), the interface doesn't undergo a magnetic phase transition and retains its global FM ordered state. In addition to changes in the interfacial magnetic ordering, the global magnetization of LSMO increases while switching the polarization from positive to negative and decreases vice versa. DFT calculations indicate that this enhanced magnetization also correlates with an out of plane tensile strain, whereas the suppressed magnetization for positive polarization is attributed to out of plane compressive strain. These calculations also show the coexistence of FM and A-AF phases at zero out of plane strain. Charge modulations throughout the LSMO layer appear to be unaffected by strain, suggesting that these charge mediated effects do not significantly change the global magnetization. Our PNR results and DFT calculations are in consort to verify that the interfacial magnetic modulations are due to co-action of strain and charge mediated effects with the strain and charge effects dominant at different length scale.

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Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 1509749

Alternate ID(s):: OSTI ID: 1634967

Report Number(s):: LA-UR-19-29648; RSCACL

Journal Information:: RSC Advances, Journal Name: RSC Advances Vol. 9 Journal Issue: 23; ISSN 2046-2069

Publisher:: Royal Society of Chemistry (RSC)Copyright Statement

Country of Publication:: United Kingdom

Language:: English

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Cited by: 9 works

Citation information provided by
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