Nanoscale Investigation of Grain Boundary Characteristics of Single-Crystalline-Like GaAs Films and Solar Cells on Flexible Metal Substrates

Conference · Thu Nov 29 00:00:00 EST 2018

DOI:https://doi.org/10.1109/PVSC.2018.8547743· OSTI ID:1507670

Dutta, Pavel ^[1]; Poplawsky, Jonathan ^[2]; Guthrey, Harvey L ^[3]; Rathi, Monika ^[1]; Khatiwada, Devendra ^[1]; Sun, Sicong ^[1]; Yao, Yao ^[1]; Yu, Bo ^[1]; Galstyan, Eduard ^[1]; Selvamanickam, Venkat ^[1]

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1. University of Houston
2. Oak Ridge National Laboratory
3. National Renewable Energy Laboratory (NREL), Golden, CO (United States)

High-resolution imaging with nanometer spatial resolution was carried out to unravel the grain and grain boundary (GB) properties of single-crystalline-like n-type GaAs films and single-junction solar cells on epi-ready flexible metal substrates. Electron Back Scattered Diffraction studies revealed ultra-low angle GBs with the presence of twin boundaries. The pn junction carrier collection properties were directly imaged using cross-sectional Electron Beam Induced Current measurements. Low-temperature Cathodoluminescence imaging indicated a strong component of optical emission from the GBs. Comprehensive studies of the structural, chemical, optical and electrical properties were carried out to unravel the fundamental GB properties of flexible GaAs films on metal substrates.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1507670
• Report Number(s): NREL/CP-5K00-73684
• Resource Relation: Conference: Presented at the 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 10-15 June 2018, Waikoloa Village, Hawaii
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
epitaxial growth
gallium arsenide
flexible substrate
MOCVD
photovoltaic cells