Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures
- School of Nuclear Science and Technology, Lanzhou University, Lanzhou Gansu China
- Pacific Northwest National Laboratory, Richland Washington
This study reports on ion irradiation-induced grain growth in nanocrystalline SiC films on Si substrates. The SiC grains with average size ranging from ~2 to 20 nm were embedded in amorphous SiC matrices. Irradiation was performed using 5 MeV Xe23+ ions to 115 ions/nm2 at 700 K. The irradiated films were characterized using x-ray diffraction, transmission electron microscopy and Raman spectroscopy. Significant grain growth is observed for smaller grains that tend to saturate at ~8 nm. In contrast, irradiation of larger grains (~20 nm in size) leads to a decrease in the grain size, which could be associated with the production of lattice disorder within the grains. Homonuclear C-C bonds in the irradiated amorphous SiC matrix are found to be graphitized. This bonding transformation could limit or inhibit grain growth and contribute to the size saturation. The results from this study may suggest nanocrystalline SiC as a promising candidate structural or cladding material for applications in advanced nuclear reactors.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1506989
- Report Number(s):
- PNNL-SA-133139
- Journal Information:
- Journal of the American Ceramic Society, Vol. 102, Issue 1; ISSN 0002-7820
- Publisher:
- American Ceramic Society
- Country of Publication:
- United States
- Language:
- English
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