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Title: Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures

Abstract

This study reports on ion irradiation-induced grain growth in nanocrystalline SiC films on Si substrates. The SiC grains with average size ranging from ~2 to 20 nm were embedded in amorphous SiC matrices. Irradiation was performed using 5 MeV Xe23+ ions to 115 ions/nm2 at 700 K. The irradiated films were characterized using x-ray diffraction, transmission electron microscopy and Raman spectroscopy. Significant grain growth is observed for smaller grains that tend to saturate at ~8 nm. In contrast, irradiation of larger grains (~20 nm in size) leads to a decrease in the grain size, which could be associated with the production of lattice disorder within the grains. Homonuclear C-C bonds in the irradiated amorphous SiC matrix are found to be graphitized. This bonding transformation could limit or inhibit grain growth and contribute to the size saturation. The results from this study may suggest nanocrystalline SiC as a promising candidate structural or cladding material for applications in advanced nuclear reactors.

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [1];  [1]
  1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou Gansu China
  2. Pacific Northwest National Laboratory, Richland Washington
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1506989
Report Number(s):
PNNL-SA-133139
Journal ID: ISSN 0002-7820
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Journal Volume: 102; Journal Issue: 1; Journal ID: ISSN 0002-7820
Publisher:
American Ceramic Society
Country of Publication:
United States
Language:
English
Subject:
Grain growth, ion irradiation, SiC

Citation Formats

Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, Pan, Chenlong, and Wang, Tieshan. Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures. United States: N. p., 2018. Web. doi:10.1111/jace.15895.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, Pan, Chenlong, & Wang, Tieshan. Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures. United States. doi:10.1111/jace.15895.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, Pan, Chenlong, and Wang, Tieshan. Thu . "Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures". United States. doi:10.1111/jace.15895.
@article{osti_1506989,
title = {Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures},
author = {Zhang, Limin and Jiang, Weilin and Ai, Wensi and Chen, Liang and Pan, Chenlong and Wang, Tieshan},
abstractNote = {This study reports on ion irradiation-induced grain growth in nanocrystalline SiC films on Si substrates. The SiC grains with average size ranging from ~2 to 20 nm were embedded in amorphous SiC matrices. Irradiation was performed using 5 MeV Xe23+ ions to 115 ions/nm2 at 700 K. The irradiated films were characterized using x-ray diffraction, transmission electron microscopy and Raman spectroscopy. Significant grain growth is observed for smaller grains that tend to saturate at ~8 nm. In contrast, irradiation of larger grains (~20 nm in size) leads to a decrease in the grain size, which could be associated with the production of lattice disorder within the grains. Homonuclear C-C bonds in the irradiated amorphous SiC matrix are found to be graphitized. This bonding transformation could limit or inhibit grain growth and contribute to the size saturation. The results from this study may suggest nanocrystalline SiC as a promising candidate structural or cladding material for applications in advanced nuclear reactors.},
doi = {10.1111/jace.15895},
journal = {Journal of the American Ceramic Society},
issn = {0002-7820},
number = 1,
volume = 102,
place = {United States},
year = {2018},
month = {7}
}