Tunneling in graphene–topological insulator hybrid devices

Steinberg, H.; Orona, L. A.; Fatemi, V.; Sanchez-Yamagishi, J. D.; Watanabe, K.; Taniguchi, T.; Jarillo-Herrero, P.

doi:10.1103/physrevb.92.241409

Title: Tunneling in graphene–topological insulator hybrid devices

Journal Article · Mon Dec 28 00:00:00 EST 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/physrevb.92.241409· OSTI ID:1505756

Steinberg, H. ^[1]; Orona, L. A. ^[2]; Fatemi, V. ^[2]; Sanchez-Yamagishi, J. D. ^[2]; Watanabe, K. ^[3]; Taniguchi, T. ^[3]; Jarillo-Herrero, P. ^[2]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics; Hebrew Univ. of Jerusalem (Israel). Racah Inst. of Physics
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics
National Inst. of Material Science, Tsukuba (Japan). Advanced Materials Lab.

Hybrid graphene–topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi₂Se₃ exhibit differential conductance characteristics which appear to be dominated by tunneling, roughly reproducing the Bi₂Se₃ density of states. Similar results were obtained for BLG on top of Bi₂Se₃, with tenfold greater conductance consistent with a larger contact area due to better surface conformity. The devices further show evidence of inelastic phonon-assisted tunneling processes involving both Bi₂Se₃ and graphene phonons. These processes favor phonons which compensate for momentum mismatch between the TI Γ and graphene K, K' points. Finally, the utility of these tunnel junctions is demonstrated on a density-tunable BLG device, where the charge neutrality point is traced along the energy-density trajectory. Lastly, this trajectory is used as a measure of the ground-state density of states.

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Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: SC0006418; DMR-0819762; ECS-0335765; PCIG12-GA-2012-333620

OSTI ID:: 1505756

Alternate ID(s):: OSTI ID: 1234007

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Vol. 92, Issue 24; ISSN 1098-0121

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 20 works

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