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Title: Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.5012940· OSTI ID:1505563
ORCiD logo [1];  [2];  [3]; ORCiD logo [4];  [5];  [3];  [6]
  1. Boston Univ., MA (United States); Central Univ. of Kashmir (India)
  2. Univ. of Auckland (New Zealand)
  3. Univ. of California, San Diego, CA (United States)
  4. Univ. of California, San Diego, CA (United States); Univ. de los Andes, Bogota (Columbia)
  5. Boston Univ., MA (United States)
  6. Boston Univ., MA (United States); Univ. of Auckland (New Zealand)
+ Show Author Affiliations

In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO2 thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO2 thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation. As a strongly correlated transition metal oxide, VO2 is an interesting and valuable material both for expanding our understanding of fundamental physics and for potential applications due to its particular metal-insulator transition (MIT). At 340 K, the resistance of bulk VO2 exhibits a large jump (up to 5 orders of magnitude), accompanied by first order crystal phase transition from a room temperature monoclinic phase to a high temperature tetragonal phase.1,2 The origin of the MIT has been widely discussed since electron–phonon interaction (Peierls type) or electron–electron interaction (Mott–Hubbard type) could play a key role in inducing the occurrence of the MIT.3–7 Furthermore, these characteristics of the VO2.

Research Organization:
Boston Univ., MA (United States); Univ. of California, San Diego, CA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
FG02-98ER45680; AC02-05CH11231
OSTI ID:
1505563
Alternate ID(s):
OSTI ID: 1413073
Journal Information:
Applied Physics Letters, Vol. 111, Issue 24; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

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Figures / Tables (4)

FIG. 1(p. 3)figure FIG. 1
FIG. 2(p. 3)figure FIG. 2
FIG. 3(p. 4)figure FIG. 3
FIG. 4(p. 5)figure FIG. 4

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