Department of Materials Science and Engineering, Institute for Research in Electronics and Applied Physics University of Maryland College Park Maryland
Department of Chemistry and Biochemistry University of Maryland College Park Maryland
Department of Chemistry and Biochemistry University of Maryland College Park Maryland, Institute for Physical Science and Technology University of Maryland College Park Maryland, Center for Nanophysics and Advanced Materials University of Maryland College Park Maryland
Ion bombardment of photoresist materials during plasma etching results in the formation of a surface dense amorphous carbon (DAC) layer that contributes to both etch resistance and the development of surface roughness. Real‐time ellipsometric measurements/analysis reveals that a C 4 F 8 ‐containing plasma interacts with an Ar‐plasma‐formed DAC layer to produce a modified DAC/fluorocarbon (FC) layer by FC deposition/diffusion of fluorine into the surface. The depletion of the DAC layer via modification and ion bombardment causes the etch rate of the bulk layer to increase. As the modified surface layer is formed, a noticeable decrease in surface roughness decrease is observed. These findings provide an understanding of the mechanisms of atomic layer etching processes in photoresist materials.
Pranda, Adam, et al. "Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure." Plasma Processes and Polymers, vol. 16, no. 9, Mar. 2019. https://doi.org/10.1002/ppap.201900026
Pranda, Adam, Gutierrez Razo, Sandra A., Fourkas, John T., & Oehrlein, Gottlieb S. (2019). Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure. Plasma Processes and Polymers, 16(9). https://doi.org/10.1002/ppap.201900026
Pranda, Adam, Gutierrez Razo, Sandra A., Fourkas, John T., et al., "Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure," Plasma Processes and Polymers 16, no. 9 (2019), https://doi.org/10.1002/ppap.201900026
@article{osti_1504283,
author = {Pranda, Adam and Gutierrez Razo, Sandra A. and Fourkas, John T. and Oehrlein, Gottlieb S.},
title = {Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure},
annote = {Abstract Ion bombardment of photoresist materials during plasma etching results in the formation of a surface dense amorphous carbon (DAC) layer that contributes to both etch resistance and the development of surface roughness. Real‐time ellipsometric measurements/analysis reveals that a C 4 F 8 ‐containing plasma interacts with an Ar‐plasma‐formed DAC layer to produce a modified DAC/fluorocarbon (FC) layer by FC deposition/diffusion of fluorine into the surface. The depletion of the DAC layer via modification and ion bombardment causes the etch rate of the bulk layer to increase. As the modified surface layer is formed, a noticeable decrease in surface roughness decrease is observed. These findings provide an understanding of the mechanisms of atomic layer etching processes in photoresist materials. },
doi = {10.1002/ppap.201900026},
url = {https://www.osti.gov/biblio/1504283},
journal = {Plasma Processes and Polymers},
issn = {ISSN 1612-8850},
number = {9},
volume = {16},
place = {Germany},
publisher = {Wiley Blackwell (John Wiley & Sons)},
year = {2019},
month = {03}}
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 236, Issue 1-4https://doi.org/10.1016/j.nimb.2005.03.242
Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12https://doi.org/10.1016/j.nimb.2010.02.091