Defects and Ion-Solid Interactions in Silicon Carbide
Atomic-level simulations are used to determine defect production, cascade-overlap effects, and defect migration energies in SiC. Energetic C and Si collision cascades primarily produce single interstitials, mono-vacancies, antisite defects, and small defect clusters, while amorphous clusters are produced within 25% of Au cascades. Cascade overlap results in defect stimulated cluster growth that produces amorphization. The good agreement of disordering behavior and changes in volume and elastic modulus obtained computationally and experimentally provides atomic-level interpretation of experimentally observed features. Simulations indicate that close-pair recombination activation energies range from 0.24 to 0.38 eV, and long-range migration energies for interstitials and vacancies have been determined.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 15020550
- Report Number(s):
- PNNL-SA-41633; 8208; 3448; KC0201020
- Journal Information:
- Materials Science Forum, 475-479(1-5):1345-1350, Journal Name: Materials Science Forum, 475-479(1-5):1345-1350 Journal Issue: 1-5 Vol. 475-479
- Country of Publication:
- United States
- Language:
- English
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