Identification of point defects using high-resolution electron energy loss spectroscopy

Wang, Shuo; March, Katia; Ponce, Fernando A.; Rez, Peter

doi:10.1103/PhysRevB.99.115312

Title: Identification of point defects using high-resolution electron energy loss spectroscopy

Journal Article · Mon Mar 18 00:00:00 EDT 2019 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.99.115312· OSTI ID:1501690

Wang, Shuo; March, Katia; Ponce, Fernando A.; Rez, Peter

View Accepted Manuscript (Publisher)

Cite

Export

Save

Sponsoring Organization:: USDOE

OSTI ID:: 1501690

Journal Information:: Physical Review B, Journal Name: Physical Review B Vol. 99 Journal Issue: 11; ISSN 2469-9950

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 6 works

Citation information provided by
Web of Science

References (46)

Formation of Guided Cherenkov Radiation in Silicon-Based Nanocomposites Yurtsever, Aycan; Couillard, Martin; Muller, David A. Physical Review Letters, Vol. 100, Issue 21 https://doi.org/10.1103/PhysRevLett.100.217402	journal	May 2008
Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy Krivanek, Ondrej L.; Chisholm, Matthew F.; Nicolosi, Valeria Nature, Vol. 464, Issue 7288 https://doi.org/10.1038/nature08879	journal	March 2010
Transmission Electron Microscopy Williams, David B.; Carter, C. Barry https://doi.org/10.1007/978-0-387-76501-3	book	January 2009
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications Abid, M.; Moudakir, T.; Orsal, G. Applied Physics Letters, Vol. 100, Issue 5 https://doi.org/10.1063/1.3679703	journal	January 2012
Atomic core structure of Lomer dislocation at GaAs/(001)Si interface Vilà, A.; Cornet, A.; Morante, J. R. Philosophical Magazine A, Vol. 71, Issue 1 https://doi.org/10.1080/01418619508242957	journal	January 1995
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride Stampfl, C.; Van de Walle, C. G. Physical Review B, Vol. 65, Issue 15 https://doi.org/10.1103/PhysRevB.65.155212	journal	April 2002
Growth of Ga1- xB xN by Molecular Beam Epitaxy Vezin, Vincent; Yatagai, Satoshi; Shiraki, Hiroyuki Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 11B https://doi.org/10.1143/JJAP.36.L1483	journal	November 1997
Ab initio study of oxygen point defects in GaAs, GaN, and AlN Mattila, T.; Nieminen, R. M. Physical Review B, Vol. 54, Issue 23 https://doi.org/10.1103/PhysRevB.54.16676	journal	December 1996
Extracting information from sequences of spatially resolved EELS spectra using multivariate statistical analysis Bonnet, N.; Brun, N.; Colliex, C. Ultramicroscopy, Vol. 77, Issue 3-4 https://doi.org/10.1016/S0304-3991(99)00042-X	journal	July 1999
Measuring bandgap states in individual non-stoichiometric oxide nanoparticles using monochromated STEM EELS: The Praseodymium–ceria case Bowman, W. J.; March, K.; Hernandez, C. A. Ultramicroscopy, Vol. 167 https://doi.org/10.1016/j.ultramic.2016.04.009	journal	August 2016
Structural and electronic properties of wurtzite B _x Al _{1- x} N from first-principles calculations : Structural and electronic properties of wurtzite B Zhang, Muwei; Li, Xiaohang physica status solidi (b), Vol. 254, Issue 8 https://doi.org/10.1002/pssb.201600749	journal	June 2017
Migration of interstitials in silicon Baraff, G. A.; Schlüter, M. Physical Review B, Vol. 30, Issue 6 https://doi.org/10.1103/PhysRevB.30.3460	journal	September 1984
The Theory and Interpretation of Electron Energy Loss Near-Edge Fine Structure Rez, Peter; Muller, David A. Annual Review of Materials Research, Vol. 38, Issue 1 https://doi.org/10.1146/annurev.matsci.37.052506.084209	journal	August 2008
Growth of GaBN ternary solutions by organometallic vapor phase epitaxy Polyakov, A. Y.; Shin, M.; Skowronski, M. Journal of Electronic Materials, Vol. 26, Issue 3 https://doi.org/10.1007/s11664-997-0157-x	journal	March 1997
Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow Wang, Shuo; Li, Xiaohang; Fischer, Alec M. Journal of Crystal Growth, Vol. 475 https://doi.org/10.1016/j.jcrysgro.2017.07.013	journal	October 2017
Band-gap measurements of direct and indirect semiconductors using monochromated electrons Gu, Lin; Srot, Vesna; Sigle, Wilfried Physical Review B, Vol. 75, Issue 19 https://doi.org/10.1103/PhysRevB.75.195214	journal	May 2007
Unstable composition region in the wurtzite B1−x−yGaxAlyN system Wei, C. H.; Edgar, J. H. Journal of Crystal Growth, Vol. 208, Issue 1-4 https://doi.org/10.1016/S0022-0248(99)00397-8	journal	January 2000
Phonons in Wurtzite Aluminum Nitride Schwoerer-B�hning, M.; Macrander, A. T.; Pabst, M. physica status solidi (b), Vol. 215, Issue 1 https://doi.org/10.1002/(SICI)1521-3951(199909)215:1%3C177::AID-PSSB177%3E3.0.CO;2-8	journal	September 1999
Dynamic observation of defect annealing in CdTe at lattice resolution Sinclair, R.; Ponce, F. A.; Yamashita, T. Nature, Vol. 298, Issue 5870 https://doi.org/10.1038/298127a0	journal	July 1982
Vibrational spectroscopy in the electron microscope Krivanek, Ondrej L.; Lovejoy, Tracy C.; Dellby, Niklas Nature, Vol. 514, Issue 7521 https://doi.org/10.1038/nature13870	journal	October 2014
Scattering delocalization and radiation damage in STEM-EELS Egerton, R. F. Ultramicroscopy, Vol. 180 https://doi.org/10.1016/j.ultramic.2017.02.007	journal	September 2017
First principle study of the native defects in hexagonal aluminum nitride Acta Physica Sinica, Vol. 56, Issue 9 https://doi.org/10.7498/aps.56.5376	journal	January 2007
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Luminescence from stacking faults in gallium nitride Liu, R.; Bell, A.; Ponce, F. A. Applied Physics Letters, Vol. 86, Issue 2 https://doi.org/10.1063/1.1852085	journal	January 2005
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Phonon excitations and related thermal properties of aluminum nitride Nipko, J. C.; Loong, C. -K. Physical Review B, Vol. 57, Issue 17 https://doi.org/10.1103/PhysRevB.57.10550	journal	May 1998
The GW method Aryasetiawan, F.; Gunnarsson, O. Reports on Progress in Physics, Vol. 61, Issue 3 https://doi.org/10.1088/0034-4885/61/3/002	journal	March 1998
Three-dimensional imaging of individual hafnium atoms inside a semiconductor device van Benthem, Klaus; Lupini, Andrew R.; Kim, Miyoung Applied Physics Letters, Vol. 87, Issue 3 https://doi.org/10.1063/1.1991989	journal	July 2005
Super-Resolution Fluorescence Microscopy Huang, Bo; Bates, Mark; Zhuang, Xiaowei Annual Review of Biochemistry, Vol. 78, Issue 1 https://doi.org/10.1146/annurev.biochem.77.061906.092014	journal	June 2009
Vibrational and valence aloof beam EELS: A potential tool for nondestructive characterization of nanoparticle surfaces Crozier, Peter A. Ultramicroscopy, Vol. 180 https://doi.org/10.1016/j.ultramic.2017.03.011	journal	September 2017
Deciphering chemical order/disorder and material properties at the single-atom level Yang, Yongsoo; Chen, Chien-Chun; Scott, M. C. Nature, Vol. 542, Issue 7639 https://doi.org/10.1038/nature21042	journal	February 2017
Refractive indices of BxAl1−xN (x= 0–0.012) and ByGa1−yN (y= 0–0.023) epitaxial layers in ultraviolet region Watanabe, Shunsuke; Takano, Takayohi; Jinen, Keisuke physica status solidi (c), Vol. 0, Issue 7 https://doi.org/10.1002/pssc.200303549	journal	December 2003
Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE Orsal, G.; Maloufi, N.; Gautier, S. Journal of Crystal Growth, Vol. 310, Issue 23 https://doi.org/10.1016/j.jcrysgro.2008.08.024	journal	November 2008
Three-dimensional imaging of dislocations in a nanoparticle at atomic resolution Chen, Chien-Chun; Zhu, Chun; White, Edward R. Nature, Vol. 496, Issue 7443 https://doi.org/10.1038/nature12009	journal	March 2013
The influence of surfaces and interfaces on high spatial resolution vibrational EELS from SiO2 Venkatraman, Kartik; Rez, Peter; March, Katia Microscopy, Vol. 67, Issue suppl_1 https://doi.org/10.1093/jmicro/dfy003	journal	February 2018
High-resolution transmission electron microscopy of 60[ddot] dislocations in si-GaAs Gerthsen, D.; Ponce, F. A.; Anderson, G. B. Philosophical Magazine A, Vol. 59, Issue 5 https://doi.org/10.1080/01418618908209836	journal	May 1989
Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain Kim, Honggyu; Meng, Yifei; Kwon, Ji-Hwan IUCrJ, Vol. 5, Issue 1 https://doi.org/10.1107/S2052252517016219	journal	January 2018
Vacancies in wurtzite GaN and AlN Laaksonen, K.; Ganchenkova, M. G.; Nieminen, R. M. Journal of Physics: Condensed Matter, Vol. 21, Issue 1 https://doi.org/10.1088/0953-8984/21/1/015803	journal	December 2008
100-nm thick single-phase wurtzite BAlN films with boron contents over 10%: 100-nm thick single-phase wurtzite BAlN films Li, Xiaohang; Wang, Shuo; Liu, Hanxiao physica status solidi (b), Vol. 254, Issue 8 https://doi.org/10.1002/pssb.201600699	journal	January 2017
Optical gap and optically active intragap defects in cubic BN Tararan, Anna; di Sabatino, Stefano; Gatti, Matteo Physical Review B, Vol. 98, Issue 9 https://doi.org/10.1103/PhysRevB.98.094106	journal	September 2018
Scattering Cross Sections in Electron Microscopy and Analysis Rez, Peter Microscopy and Microanalysis, Vol. 7, Issue 04 https://doi.org/10.1017/S1431927601010340	journal	July 2001
Towards sub-10 meV energy resolution STEM-EELS Krivanek, Ondrej L.; Lovejoy, Tracy C.; Murfitt, Matthew F. Journal of Physics: Conference Series, Vol. 522 https://doi.org/10.1088/1742-6596/522/1/012023	journal	June 2014
Point-defect complexes and broadband luminescence in GaN and AlN Mattila, T.; Nieminen, R. M. Physical Review B, Vol. 55, Issue 15 https://doi.org/10.1103/PhysRevB.55.9571	journal	April 1997
Damage-free vibrational spectroscopy of biological materials in the electron microscope Rez, Peter; Aoki, Toshihiro; March, Katia Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms10945	journal	March 2016
Growth and Characterization of B _x Ga _l-x N on 6H-SiC (0001) by MOVPE Wei, C. H.; Xie, Z. Y.; Edgar, J. H. MRS Proceedings, Vol. 537 https://doi.org/10.1557/PROC-537-G3.79	journal	January 1998
Point-Defect Nature of the Ultraviolet Absorption Band in AlN Alden, D.; Harris, J. S.; Bryan, Z. Physical Review Applied, Vol. 9, Issue 5 https://doi.org/10.1103/PhysRevApplied.9.054036	journal	May 2018

Similar Records

Evidence for anisotropic dielectric properties of monoclinic hafnia using valence electron energy-loss spectroscopy in high-resolution transmission electron microscopy and ab initio time-dependent density-functional theory

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Applied Physics Letters · OSTI ID:1501690

Guedj, C.; Hung, L.; Sottile, F.; +3 more

Direct band gap measurement of Cu(In,Ga)(Se,S){sub 2} thin films using high-resolution reflection electron energy loss spectroscopy

Journal Article · Mon Jun 29 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:1501690

Heo, Sung; Lee, Hyung-Ik; Park, Jong-Bong; +13 more

Two-dimensional boundary conditions and finite-size effects in angle-resolved photoelectron emission spectroscopy, low-energy electron diffraction, and high-resolution electron-energy-loss spectroscopy

Journal Article · Mon Feb 15 00:00:00 EST 1988 · Phys. Rev. B: Condens. Matter; (United States) · OSTI ID:1501690

Tong, S Y; Poon, H C

Title: Identification of point defects using high-resolution electron energy loss spectroscopy

Citation Formats

References (46)

Similar Records

Related Subjects