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Title: Crystal level simulations using Eulerian finite element methods

Abstract

Over the last several years, significant progress has been made in the use of crystal level material models in simulations of forming operations. However, in Lagrangian finite element approaches simulation capabilities are limited in many cases by mesh distortion associated with deformation heterogeneity. Contexts in which such large distortions arise include: bulk deformation to strains approaching or exceeding unity, especially in highly anisotropic or multiphase materials; shear band formation and intersection of shear bands; and indentation with sharp indenters. Investigators have in the past used Eulerian finite element methods with material response determined from crystal aggregates to study steady state forming processes. However, Eulerian and Arbitrary Lagrangian-Eulerian (ALE) finite element methods have not been widely utilized for simulation of transient deformation processes at the crystal level. The advection schemes used in Eulerian and ALE codes control mesh distortion and allow for simulation of much larger total deformations. We will discuss material state representation issues related to advection and will present results from ALE simulations.

Authors:
; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
15013861
Report Number(s):
UCRL-PROC-202259
TRN: US200803%%948
DOE Contract Number:
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: Presented at: NUMIFORM 2004, The 8th International Conference on Numerical Methods in Industrial Forming Processes, Columbus, OH, United States, Jun 13 - Jun 17, 2004
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ADVECTION; DEFORMATION; FINITE ELEMENT METHOD; LAGRANGIAN FUNCTION; SHEAR; SIMULATION; STRAINS; TRANSIENTS

Citation Formats

Becker, R, Barton, N R, and Benson, D J. Crystal level simulations using Eulerian finite element methods. United States: N. p., 2004. Web.
Becker, R, Barton, N R, & Benson, D J. Crystal level simulations using Eulerian finite element methods. United States.
Becker, R, Barton, N R, and Benson, D J. Fri . "Crystal level simulations using Eulerian finite element methods". United States. doi:. https://www.osti.gov/servlets/purl/15013861.
@article{osti_15013861,
title = {Crystal level simulations using Eulerian finite element methods},
author = {Becker, R and Barton, N R and Benson, D J},
abstractNote = {Over the last several years, significant progress has been made in the use of crystal level material models in simulations of forming operations. However, in Lagrangian finite element approaches simulation capabilities are limited in many cases by mesh distortion associated with deformation heterogeneity. Contexts in which such large distortions arise include: bulk deformation to strains approaching or exceeding unity, especially in highly anisotropic or multiphase materials; shear band formation and intersection of shear bands; and indentation with sharp indenters. Investigators have in the past used Eulerian finite element methods with material response determined from crystal aggregates to study steady state forming processes. However, Eulerian and Arbitrary Lagrangian-Eulerian (ALE) finite element methods have not been widely utilized for simulation of transient deformation processes at the crystal level. The advection schemes used in Eulerian and ALE codes control mesh distortion and allow for simulation of much larger total deformations. We will discuss material state representation issues related to advection and will present results from ALE simulations.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Feb 06 00:00:00 EST 2004},
month = {Fri Feb 06 00:00:00 EST 2004}
}

Conference:
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