Effects of Trace Metals and Organic Additives on Porosity and Dielectric Constant of High Purity Mesoporous Silica Films
Porous ceramic and porous hybrid ceramic films are potentially useful as low dielectric constant interlayers in semiconductor interconnects (1-6). The hybrid ceramic films are generally defined as films that contain both organic and ceramic molecular components in the structure, as for example, organosilicate films. A key challenge with advanced dielectric films in interconnects is the need for extremely low dielectric constants in very high purity materials (<50 parts per billion metal impurities). This communication describes observations related to film properties as a function of metal content in molecularly templated porous films, and a specific family of additives that may be used with highly pure alkali-metal-free ceramic and hybrid precursors for such dielectric films that will enable better control of the film porosity and quality, and lower dielectric constants, while maintaining the required mechanical integrity. The efficacy of such additives is illustrated using surfactant-templated mesoporous silicate films as a model example. This formulation could be broadly applicable to any cross-linked ceramic or hybrid ceramic films, including silicate and organosilicate films, and especially highly porous forms of the films for low dielectric constant applications.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US), Environmental Molecular Sciences Laboratory (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15008749
- Report Number(s):
- PNWD-SA-5825; 2127
- Journal Information:
- Chemical Communications, Journal Name: Chemical Communications Vol. 15
- Country of Publication:
- United States
- Language:
- English
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