Defects in Photovoltaic Materials and the Origins of Failure to Dope Them: Preprint

Conference · Wed May 01 00:00:00 EDT 2002

DOI:https://doi.org/10.1109/PVSC.2002.1190611· OSTI ID:15007053

Zunger, A; Kilic, C; Wang, L

I will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is, in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOs work. Recent results on the surprising stability of polar (112)+ surfaces of CIS will also be described in this context.

• Research Organization: National Renewable Energy Lab., Golden, CO. (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 15007053
• Report Number(s): NREL/CP-590-32216
• Resource Type: Conference paper/presentation
• Conference Information: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CALCULATED FORMATION ENERGIES
CHALCOPYRITE
CONDUCTION BAND MINIMUM
DEFECTS
DESIGN
DOPING LIMIT RULE
DOZINC-BLENDE
ELECTRONIC STRUCTURE OF DEFECTS AND IMPURITIES: MAIN-GROUP DEFECTS AND IMPURITIES IN SEMICONDUCTORS
ELECTRONIC STRUCTURE OF SPECIFIC BULK SOLIDS: BINARY SEMICONDUCTORS AND INSULATORS
MATERIALS SCIENCE AND SEMICONDUCTORS
N-TYPE DOPING
OXIDES
PV
SEMICONDUCTORS
SOLAR ENERGY
SOLAR ENERGY - PHOTOVOLTAICS
SOLID STATE THEORY
STABILITY