Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application: Preprint

Conference · Wed May 01 00:00:00 EDT 2002

DOI:https://doi.org/10.1109/PVSC.2002.1190714· OSTI ID:15007049

Friedman, D J; Kurtz, S R; Geisz, J F

This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than {approx}75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 15007049
• Report Number(s): NREL/CP-520-32188; TRN: US200413%%98
• Resource Relation: Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ANTIREFLECTION COATINGS
CONCENTRATORS
EFFICIENCY
SOLAR CELLS
SOLAR ENERGY
PV
FOUR-JUNCTION SOLAR CELL
GAINP/GAAS/1-EV/GE
TERRESTRIAL CONCENTRATOR SPECTRUM
TWO-LAYER ANTIREFLECTION COATINGS
GAINNAS JUNCTIONS
MINORITY-CARRIER
PHOTOCURRENT
SOLAR ENERGY - PHOTOVOLTAICS