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Effects of Dislocations on Minority Carrier Lifetime in Dislocated Float Zone Silicon

Conference · · 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers from the workshop held 11-14 August 2002, Breckenridge, Colorado
OSTI ID:15006762
We present a correlation of Microwave Photoconductance Decay minority carrier lifetime with dislocation density in high purity Float Zone silicon. Electron Beam Induced Current (EBIC) images were carefully aligned to lifetime maps and depth profiling of individual defect electrical activity was done by varying the bias of Schottky diodes. The data presented provides a relationship between lifetime variations and EBIC contrast, based on dislocation density and impurity decoration in the near surface zone.
Research Organization:
National Renewable Energy Lab., Golden, CO. (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC36-99GO10337;
OSTI ID:
15006762
Report Number(s):
NREL/CP-520-35652
Resource Type:
Conference paper/presentation
Conference Information:
Journal Name: 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers from the workshop held 11-14 August 2002, Breckenridge, Colorado
Country of Publication:
United States
Language:
English