Wafer Bonding and Layer Transfer Processes for High Efficiency Solar Cells
Conference
·
· NCPV and Solar Program Review Meeting Proceedings, 24-26 March 2003, Denver, Colorado (CD-ROM)
A wafer-bonded four-junction cell design consisting of InGaAs, InGaAsP, GaAs, and Ga0.5In0.5P subcells that could reach one-sun AM0 efficiencies of 35.4% is described. The design relies on wafer-bonding and layer transfer for integration of non-lattice-matched subcells. Wafer bonding and layer transfer processes have shown promise in the fabrication of InP/Si epitaxial templates for growth of the bottom InGaAs and InGaAsP subcells on a Si support substrate. Subsequent wafer bonding and layer transfer of a thin Ge layer onto the lower subcell stack can serve as an epitaxial template for GaAs and Ga0.5In0.5P subcells. Additionally, wafer bonded Ge/Si substrates offer the possibility to improve the mechanical performance of existing triple-junction solar cell designs, while simultaneously reducing their cost. Present results indicate that optically active III/V compound semiconductors can be grown on both Ge/Si and InP/Si heterostructures. Current-voltage electrical characterization of the interfaces of these structures indicates that both InP/Si and Ge/Si interfaces have specific resistances lower than 0.1 W?cm2 for heavily doped wafer bonded interfaces, enabling back surface power extraction from the finished cell structure.
- Research Organization:
- National Renewable Energy Lab., Golden, CO. (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99GO10337;
- OSTI ID:
- 15006757
- Report Number(s):
- NREL/CP-520-35642
- Resource Type:
- Conference paper/presentation
- Conference Information:
- Journal Name: NCPV and Solar Program Review Meeting Proceedings, 24-26 March 2003, Denver, Colorado (CD-ROM)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Development of InP solar cells on inexpensive Si wafers
Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding
100 mm Engineered InP-on-Si Laminate Substrates for InP-based Multijunction Solar Cells
Book
·
Fri Dec 30 23:00:00 EST 1994
·
OSTI ID:191105
Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding
Conference
·
Sat Dec 31 23:00:00 EST 2005
·
OSTI ID:944001
100 mm Engineered InP-on-Si Laminate Substrates for InP-based Multijunction Solar Cells
Technical Report
·
Mon Jun 25 00:00:00 EDT 2012
·
OSTI ID:1234966