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Wafer Bonding and Layer Transfer Processes for High Efficiency Solar Cells

Conference · · NCPV and Solar Program Review Meeting Proceedings, 24-26 March 2003, Denver, Colorado (CD-ROM)
A wafer-bonded four-junction cell design consisting of InGaAs, InGaAsP, GaAs, and Ga0.5In0.5P subcells that could reach one-sun AM0 efficiencies of 35.4% is described. The design relies on wafer-bonding and layer transfer for integration of non-lattice-matched subcells. Wafer bonding and layer transfer processes have shown promise in the fabrication of InP/Si epitaxial templates for growth of the bottom InGaAs and InGaAsP subcells on a Si support substrate. Subsequent wafer bonding and layer transfer of a thin Ge layer onto the lower subcell stack can serve as an epitaxial template for GaAs and Ga0.5In0.5P subcells. Additionally, wafer bonded Ge/Si substrates offer the possibility to improve the mechanical performance of existing triple-junction solar cell designs, while simultaneously reducing their cost. Present results indicate that optically active III/V compound semiconductors can be grown on both Ge/Si and InP/Si heterostructures. Current-voltage electrical characterization of the interfaces of these structures indicates that both InP/Si and Ge/Si interfaces have specific resistances lower than 0.1 W?cm2 for heavily doped wafer bonded interfaces, enabling back surface power extraction from the finished cell structure.
Research Organization:
National Renewable Energy Lab., Golden, CO. (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC36-99GO10337;
OSTI ID:
15006757
Report Number(s):
NREL/CP-520-35642
Resource Type:
Conference paper/presentation
Conference Information:
Journal Name: NCPV and Solar Program Review Meeting Proceedings, 24-26 March 2003, Denver, Colorado (CD-ROM)
Country of Publication:
United States
Language:
English