Fundamental nature of ion–solid interactions in SiC
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Angstrom Lab., Uppsala (Sweden)
The integration of experimental and computer simulation studies is providing atomic-level understanding of the nature of ion-beam modification in SiC. Density functional theory calculations and molecular dynamics simulations are used to determine stable defect configurations, defect production, and cascade-overlap effects. These studies show that ion implantation in SiC results primarily in the creation of interstitials, vacancies, antisite defects, and small defect clusters that interact to produce long-range structural disorder. The accumulation of damage and defect configurations on both the Si and C sublattices have been determined for a range of ions using multi-axial channeling measurements. The consistent agreement of the experimental and computational results provides atomic-level insights into the interpretation of experimentally observed features.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States). Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15004487
- Report Number(s):
- PNNL-SA--37028; 3448; KC0201020
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms Journal Issue: C Vol. 206; ISSN 0168-583X
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
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