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Title: Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition: Preprint

Abstract

We have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200 to 400C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. We found that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
15004058
Report Number(s):
NREL/CP-520-33929
TRN: US201015%%294
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Prepared for the 2003 Materials Research Society Spring Meeting, 21-25 April 2003, San Francisco, California
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DILUTION; GLASS; HYDROGEN; MIXTURES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEEDS; SILICON; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; PV; SUBSTRATE TEMPERATURE; HYDROGEN DILUTION RATIO; SILICON THIN FILMS; HOT-WIRE CHEMICAL VAPOR DEPOSITION; NANOCRYSTALLINE; Solar Energy - Photovoltaics

Citation Formats

Moutinho, H R, Jiang, C -S, Nelson, B, Xu, Y, Perkins, J, To, B, Jones, K M, Romero, M J, and Al-Jassim, M M. Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition: Preprint. United States: N. p., 2003. Web.
Moutinho, H R, Jiang, C -S, Nelson, B, Xu, Y, Perkins, J, To, B, Jones, K M, Romero, M J, & Al-Jassim, M M. Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition: Preprint. United States.
Moutinho, H R, Jiang, C -S, Nelson, B, Xu, Y, Perkins, J, To, B, Jones, K M, Romero, M J, and Al-Jassim, M M. Tue . "Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition: Preprint". United States. https://www.osti.gov/servlets/purl/15004058.
@article{osti_15004058,
title = {Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition: Preprint},
author = {Moutinho, H R and Jiang, C -S and Nelson, B and Xu, Y and Perkins, J and To, B and Jones, K M and Romero, M J and Al-Jassim, M M},
abstractNote = {We have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200 to 400C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. We found that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.},
doi = {},
url = {https://www.osti.gov/biblio/15004058}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {4}
}

Conference:
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