Interface Structure of an Epitaxial Cubic Ceria Film on Cubic Zirconia

Journal Article · Sat Feb 01 04:00:00 EST 2003 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/j.1151-2916.2003.tb00026.x· OSTI ID:15003328

Wang, Chong M; Thevuthasan, Suntharampillai; Peden, Charles HF

A cubic CeO2 (001) film of thickness equal to {approx}58 nm was epitaxially grown on Y2O3-stabilized cubic ZrO2 by oxygen plasma assisted molecular beam epitaxy (OPA-MBE). The interface was characterized using high resolution transmission electron microscopy (HRTEM). The interface exhibited coherent regions separated by equally-spaced misfit dislocations. When imaged from the[100] direction, the dislocation spacing is 3.3? 0.5 nm, which is slightly shorter than the expected value of 4.9 nm calculated from the differences in lattice constants given in the literature, but is fairly consistent with the 3.9 nm lattice mismatch measured by electron diffraction. Thus, the results presented here indicate that the lattice mismatch between the film and the substrate is accommodated mainly by interface misfit dislocations above some critical thickness.

• Research Organization: Pacific Northwest National Lab., Richland, WA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC06-76RL01830
• OSTI ID: 15003328
• Report Number(s): PNNL-SA-35655; KP1301030
• Journal Information: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Journal Issue: 2 Vol. 86; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
ELECTRON DIFFRACTION
MOLECULAR BEAM EPITAXY
OXYGEN
PLASMA
RESOLUTION
SUBSTRATES
THICKNESS
THIN FILM
CEO2
ZRO2
HRTEM
DISLOCATION
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY