Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint
Conference
·
OSTI ID:15000060
Presented at the 2001 NCPV Program Review Meeting: Temp-dependent lifetime measurements can further characterize trapping and recombination. We did lifetime measurements on GaNAs/GaAs using photoconductive decay technique.
- Research Organization:
- National Renewable Energy Lab., Golden, CO. (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 15000060
- Report Number(s):
- NREL/CP-520-31033; TRN: US200325%%22
- Resource Relation:
- Conference: Presented at the NCPV Program Review Meeting, Lakewood, CO (US), 10/14/2001--10/17/2001; Other Information: PBD: 1 Oct 2001
- Country of Publication:
- United States
- Language:
- English
Similar Records
Measurement of Recombination Parameters of Photovoltaic Materials by Resonant-Coupled Photoconductive Decay: Preprint
Interplay Between Strain and Thickness on the Effective Carrier Lifetime of Buffer-Mediated Epitaxial Germanium Probed by the Photoconductance Decay Technique
Phase-Dependent Carrier Processes in Silicon-Based Photovoltaic Materials: Preprint
Conference
·
Mon Oct 01 00:00:00 EDT 2001
·
OSTI ID:15000060
Interplay Between Strain and Thickness on the Effective Carrier Lifetime of Buffer-Mediated Epitaxial Germanium Probed by the Photoconductance Decay Technique
Journal Article
·
Fri May 19 00:00:00 EDT 2023
· ACS Applied Electronic Materials
·
OSTI ID:15000060
+1 more
Phase-Dependent Carrier Processes in Silicon-Based Photovoltaic Materials: Preprint
Conference
·
Mon Oct 01 00:00:00 EDT 2001
·
OSTI ID:15000060
+2 more