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Compressed Optimization of Device Architectures for Semiconductor Quantum Devices

Journal Article · · Physical Review Applied
 [1];  [2];  [3];  [3];  [1];  [1];  [4]
  1. Univ. of Wisconsin, Madison, WI (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Microsoft Research, Redmond, WA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Univ. of Wisconsin, Madison, WI (United States); Univ. of New South Wales, Sydney, NSW (Australia)
Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum-mechanical objects with unprecedented accuracy. In semiconductor quantum-dot qubits, this manipulation requires controlling the dot orbital energies, the tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device, the positions of which are fixed once the device is fabricated. While there has been much success with small numbers of dots, as the number of dots grows, it will be increasingly useful to control these systems with as few electrode voltage changes as possible. Here, we introduce a protocol, which we call the "compressed optimization of device architectures" (CODA), in order both to efficiently identify sparse sets of voltage changes that control quantum systems and to introduce a metric that can be used to compare device designs. As an example of the former, we apply this method to simulated devices with up to 100 quantum dots and show that CODA automatically tunes devices more efficiently than other common nonlinear optimizers. To demonstrate the latter, we determine the optimal lateral scale for a triple quantum dot, yielding a simulated device that can be tuned with small voltage changes on a limited number of electrodes.
Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1497629
Alternate ID(s):
OSTI ID: 1334235
Report Number(s):
SAND2019--1977J; 672814
Journal Information:
Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 2 Vol. 11; ISSN 2331-7019; ISSN PRAHB2
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

References (46)

Stable signal recovery from incomplete and inaccurate measurements
  • Candès, Emmanuel J.; Romberg, Justin K.; Tao, Terence
  • Communications on Pure and Applied Mathematics, Vol. 59, Issue 8, p. 1207-1223 https://doi.org/10.1002/cpa.20124
journal January 2006
Principles of Quantum Mechanics book January 1994
The Physics of Low-dimensional Semiconductors book January 2012
A single-atom electron spin qubit in silicon journal September 2012
High-fidelity readout and control of a nuclear spin qubit in silicon journal April 2013
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit journal July 2014
A two-qubit logic gate in silicon journal October 2015
A programmable two-qubit quantum processor in silicon journal February 2018
A coherent spin–photon interface in silicon journal February 2018
A single-atom transistor journal February 2012
Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot journal August 2014
Microwave-driven coherent operation of a semiconductor quantum dot charge qubit journal February 2015
A dressed spin qubit in silicon journal October 2016
State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot journal October 2016
Coherent manipulation of valley states at multiple charge configurations of a silicon quantum dot device journal July 2017
Silicon quantum processor with robust long-distance qubit couplings journal September 2017
Coherent coupling between a quantum dot and a donor in silicon journal October 2017
Two-electron spin correlations in precision placed donors in silicon journal March 2018
A silicon metal-oxide-semiconductor electron spin-orbit qubit journal May 2018
High-fidelity entangling gate for double-quantum-dot spin qubits journal January 2017
Extending the coherence of a quantum dot hybrid qubit journal August 2017
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% journal December 2017
Transport through an impurity tunnel coupled to a Si/SiGe quantum dot journal September 2015
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime journal May 2016
Automated tuning of inter-dot tunnel coupling in double quantum dots journal July 2018
Two-axis control of a singlet-triplet qubit with an integrated micromagnet journal August 2014
Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet journal October 2016
A class of methods for solving nonlinear simultaneous equations journal January 1965
Quantum computation with quantum dots journal January 1998
Quantum dot self-consistent electronic structure and the Coulomb blockade journal November 1996
Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models journal October 2004
Quantum Coherence in a One-Electron Semiconductor Charge Qubit journal December 2010
Charge Noise Spectroscopy Using Coherent Exchange Oscillations in a Singlet-Triplet Qubit journal April 2013
High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D − Charge State journal October 2015
Tunable Hybrid Qubit in a GaAs Double Quantum Dot journal February 2016
Reduced Sensitivity to Charge Noise in Semiconductor Spin Qubits via Symmetric Operation journal March 2016
Noise Suppression Using Symmetric Exchange Gates in Spin Qubits journal March 2016
Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits journal March 2018
Spins in few-electron quantum dots journal October 2007
Silicon quantum electronics journal July 2013
Compressed sensing journal April 2006
Atomically engineered electron spin lifetimes of 30 s in silicon journal March 2017
Resonantly driven CNOT gate for electron spins journal December 2017
Strong spin-photon coupling in silicon journal January 2018
Sparse Approximate Solutions to Linear Systems journal April 1995
QFlow lite dataset: A machine-learning approach to the charge states in quantum dot experiments journal October 2018

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Efficiently measuring a quantum device using machine learning journal September 2019

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