Dielectric Behavior as a Screen in Rational Searches for Electronic Materials: Metal Pnictide Sulfosalts
Journal Article
·
· Journal of the American Chemical Society
- Jilin Univ., Changchun (China). State Key Lab. of Superhard Materials, Key Lab. of Automobile Materials of MOE, and School of Materials Science; University of Missouri
- Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
- National Chung Hsing Univ., Taichung (Taiwan). Inst. of Nanoscience and Dept. of Physics
- Jilin Univ., Changchun (China). State Key Lab. of Superhard Materials, Key Lab. of Automobile Materials of MOE, and School of Materials Science
Dielectric screening plays an important role in reducing the strength of carrier scattering and trapping by point defects for many semiconductors such as the halide perovskite solar materials. However, it was rarely considered as a screen to find new electronic semiconductors. We performed a material search study using the dielectric properties as a screen to identify potential electronic materials in the class of metal-pnictide ternary sulfosalts, containing Bi or Sb. These salts are basically ionic due to the electronegativity difference between the S and both the metal and pnictogen elements. However, we do find significant cross-gap hybridization between the S p-derived valence bands and pnictogen p-derived conduction bands in many of the materials. This leads to enhanced Born effective charges and, in several cases, highly enhanced dielectric constants. We find a chemical rule for high dielectric constants in terms of the bond connectivity of the pnictogen-chalcogen part of the crystal structure. We additionally find a series of compounds with low effective mass, high dielectric constant, and other properties that suggest good performance as electronic materials and also several potential thermoelectric compounds. Experimental optical data and solar conversion efficiency are reported for Sn-Sb-S samples, and results in accord with predicted good performance are found. The results illustrate the utility of dielectric properties as a screen for identifying complex semiconductors.
- Research Organization:
- Univ. of Missouri, Columbia, MO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- Grant/Contract Number:
- SC0019114
- OSTI ID:
- 1497397
- Journal Information:
- Journal of the American Chemical Society, Journal Name: Journal of the American Chemical Society Journal Issue: 51 Vol. 140; ISSN 0002-7863
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Topological and thermoelectric properties of double antiperovskite pnictides
Electronic Properties, Screening, and Efficient Carrier Transport in
High-Throughput Screening for Advanced Thermoelectric Materials: Diamond-Like ABX2 Compounds
Journal Article
·
Tue May 26 20:00:00 EDT 2020
· Journal of Physics. Condensed Matter
·
OSTI ID:1800184
Electronic Properties, Screening, and Efficient Carrier Transport in
Journal Article
·
Sun Feb 12 19:00:00 EST 2017
· Physical Review Applied
·
OSTI ID:1399791
High-Throughput Screening for Advanced Thermoelectric Materials: Diamond-Like ABX2 Compounds
Journal Article
·
Thu Apr 25 20:00:00 EDT 2019
· ACS Applied Materials and Interfaces
·
OSTI ID:1542891