Using heavy ions to simulate displacement damage by neutron on microelectronic devices.
Conference
·
OSTI ID:1496943
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1496943
- Report Number(s):
- SAND2014-15385PE; 533800
- Resource Relation:
- Conference: Proposed for presentation at the 7th International Meeting on Radiation Effects in Matter held July 9-12, 2014 in Budapest, Hungary.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Using heavy ions to simulate displacement damage by neutrons in microelectronic devices.
Displacement damage in Transistor: Using Ions to Simulate Neutrons.
Radiation Effects Microscopy in Microelectronic Devices Using a Heavy Ion Nuclear Microprobe.
Conference
·
Sat Mar 01 00:00:00 EST 2014
·
OSTI ID:1496943
Displacement damage in Transistor: Using Ions to Simulate Neutrons.
Conference
·
Thu Aug 01 00:00:00 EDT 2013
·
OSTI ID:1496943
Radiation Effects Microscopy in Microelectronic Devices Using a Heavy Ion Nuclear Microprobe.
Conference
·
Sat Mar 01 00:00:00 EST 2014
·
OSTI ID:1496943