Anomalous behavior of the quasi-one-dimensional quantum material Na2OsO4 at high pressure

Sereika, Raimundas; Yamaura, K.; Jia, Y.; Zhang, S.; Jin, C.; Yoon, H.; Jeong, M. Y.; Han, M. J.; Brewe, D. L.; Heald, S. M.; Sinogeikin, S.; Ding, Yang; Mao, H. -k.

doi:10.1016/j.mtphys.2018.12.001

Anomalous behavior of the quasi-one-dimensional quantum material Na₂OsO₄ at high pressure

Journal Article · Wed Feb 20 00:00:00 EST 2019 · Materials Today Physics

DOI:https://doi.org/10.1016/j.mtphys.2018.12.001· OSTI ID:1496213

Sereika, Raimundas ^[1]; Yamaura, K. ^[2]; Jia, Y. ^[3]; Zhang, S. ^[3]; Jin, C. ^[4]; Yoon, H. ^[5]; Jeong, M. Y. ^[5]; Han, M. J. ^[6]; Brewe, D. L. ^[7]; ^[7]; Sinogeikin, S. ^[8]; Ding, Yang ^[1]; Mao, H. -k. ^[9]

Center for High Pressure Science and Technology Advanced Research, Beijing (China)
National Inst. of Materials Science, Ibaraki (Japan)
Chinese Academy of Sciences (CAS), Beijing (China)
Chinese Academy of Sciences (CAS), Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
KAIST, Daejeon (Republic of Korea)
KAIST, Daejeon (Republic of Korea); Korea Advanced Institute of Science and Technology, Daejeon (Republic of Korea)
Argonne National Lab. (ANL), Argonne, IL (United States)
Carnegie Inst. of Washington, Washington, DC (United States); DACTools LLC, Naperville, IL (United States)
Center for High Pressure Science and Technology Advanced Research, Beijing (China); Carnegie Inst. of Washington, Washington, DC (United States)

Na₂OsO₄ is an unusual quantum material that, in contrast to the common 5d² oxides with spins = 1, owns a magnetically silent ground state with spin = 0 and a band gap at Fermi level attributed to a distortion in the OsO₆ octahedral sites. In this semiconductor, our low-temperature electrical transport measurements indicate an anomaly at 6.3 K with a power-law behavior inclining through the semiconductor-to-metal transition observed at 23 GPa. Even more peculiarly, we discover that before this transition, the material becomes more insulating instead of merely turning into a metal according to the conventional wisdom. Furthermore, to investigate the underlying mechanisms, we applied experimental and theoretical methods to examine the electronic and crystal structures comprehensively, and conclude that the enhanced insulating state at high pressure originates from the enlarged distortion of the OsO₆. It is such a distortion that widens the band gap and decreases the electron occupancy in Os’s t_{2_g} orbital through an interplay of the lattice, charge, and orbital in the material, which is responsible for the changes observed in our experiments.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: National Key Research and Development Program of China; National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division

Grant/Contract Number:: AC02-06CH11357; FG02-94ER14466; FG02-99ER45775; NA0001974

OSTI ID:: 1496213

Alternate ID(s):: OSTI ID: 1637245

Journal Information:: Materials Today Physics, Journal Name: Materials Today Physics Journal Issue: C Vol. 8; ISSN 2542-5293

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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