Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Generalized model for tuning tunnel rates in a silicon quantum dot.

Conference ·
OSTI ID:1495781
; ; ; ; ; ; ; ; ;
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, null
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1495781
Report Number(s):
SAND2018-1507C; 660650
Country of Publication:
United States
Language:
English

Similar Records

Tunnel coupling characterization between quantum dots and donor-like transitions in silicon.
Conference · Wed Oct 01 00:00:00 EDT 2014 · OSTI ID:1242068
Designing for strain in silicon quantum dot devices.
Conference · Wed Feb 28 23:00:00 EST 2018 · OSTI ID:1498821
Counted Antimony donors in Silicon quantum dots.
Conference · Sat Jan 31 23:00:00 EST 2015 · OSTI ID:1531285

Related Subjects