Identifying the dominant interstitial complex in dilute GaAsN alloys

Jen, T.; Vardar, G.; Wang, Y. Q.; Goldman, R. S.

doi:10.1063/1.4935857

Identifying the dominant interstitial complex in dilute GaAsN alloys

Journal Article · Mon Nov 30 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4935857· OSTI ID:1495143

^[1]; Vardar, G. ^[1]; Wang, Y. Q. ^[2]; ^[3]

Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering and Dept. of Physics

Significant composition-dependent incorporation of N into non-substitutional sites is often reported for dilute GaAsN alloys. To distinguish (N-N)_As, (N-As)_As, and (As_Ga-N_As) complexes, in this work we compare Rutherford backscattering spectrometry and nuclear reaction analysis (NRA) spectra with Monte Carlo-Molecular Dynamics simulations along the [100], [110], and [111] directions. For the Monte Carlo simulation, we assume that (N-N)_As is aligned along the [111] direction, while (N-As)_As is aligned along the [010] direction. The measured channeling NRA spectra exhibit the highest (lowest) yield in the [111] ([100]) directions. Similar trends are observed for simulations of (N-As)_As, suggesting that (N-As)_As is the dominant interstitial complex in dilute GaAsN.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC)

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 1495143

Alternate ID(s):: OSTI ID: 22486149

Report Number(s):: LA-UR--15-28739

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 107; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Formation energies of substitutional NAs and split interstitial complexes in dilute GaAsN alloys with different growth orientations Li, Jian; Han, Xiuxun; Dong, Chen Applied Physics A, Vol. 124, Issue 2 https://doi.org/10.1007/s00339-017-1536-7	journal	January 2018
Bi-enhanced N incorporation in GaAsNBi alloys Occena, J.; Jen, T.; Rizzi, E. E. Applied Physics Letters, Vol. 110, Issue 24 https://doi.org/10.1063/1.4984227	journal	June 2017
Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys Occena, J.; Jen, T.; Mitchell, J. W. Applied Physics Letters, Vol. 115, Issue 8 https://doi.org/10.1063/1.5057424	journal	August 2019

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