In Situ Back‐Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells

Tan, Furui; Tan, Hairen; Saidaminov, Makhsud I.; Wei, Mingyang; Liu, Mengxia; Mei, Anyi; Li, Peicheng; Zhang, Bowen; Tan, Chih‐Shan; Gong, Xiwen; Zhao, Yongbiao; Kirmani, Ahmad R.; Huang, Ziru; Fan, James Z.; Quintero‐Bermudez, Rafael; Kim, Junghwan; Zhao, Yicheng; Voznyy, Oleksandr; Gao, Yueyue; Zhang, Feng; Richter, Lee J.; Lu, Zheng‐Hong; Zhang, Weifeng; Sargent, Edward H.

doi:10.1002/adma.201807435

In Situ Back‐Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells

Journal Article · Sun Feb 10 00:00:00 EST 2019 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201807435· OSTI ID:1494202

Tan, Furui ^[1]; Tan, Hairen ^[2]; Saidaminov, Makhsud I. ^[3]; Wei, Mingyang ^[3]; Liu, Mengxia ^[3]; Mei, Anyi ^[3]; Li, Peicheng ^[4]; Zhang, Bowen ^[5]; Tan, Chih‐Shan ^[3]; Gong, Xiwen ^[3]; Zhao, Yongbiao ^[3]; Kirmani, Ahmad R. ^[6]; Huang, Ziru ^[3]; Fan, James Z. ^[3]; Quintero‐Bermudez, Rafael ^[3]; Kim, Junghwan ^[3]; Zhao, Yicheng ^[7]; Voznyy, Oleksandr ^[3]; Gao, Yueyue ^[5]; Zhang, Feng ^[5] more »

Department of Electrical and Computer Engineering University of Toronto Toronto Ontario M5S 3G4 Canada, Key Laboratory of Photovoltaic Materials Department of Physics and Electronics Henan University Kaifeng Henan 475004 China
Department of Electrical and Computer Engineering University of Toronto Toronto Ontario M5S 3G4 Canada, National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied Sciences Nanjing University Nanjing 210093 China
Department of Electrical and Computer Engineering University of Toronto Toronto Ontario M5S 3G4 Canada
Department of Materials Science and Engineering University of Toronto 184 College Street Toronto Ontario M5S 3E4 Canada
Key Laboratory of Photovoltaic Materials Department of Physics and Electronics Henan University Kaifeng Henan 475004 China
Materials Science and Engineering Division National Institute of Standards and Technology (NIST) Gaithersburg MD 20899 USA
Department of Electrical and Computer Engineering University of Toronto Toronto Ontario M5S 3G4 Canada, Department of Materials Science and Engineering University of Toronto 184 College Street Toronto Ontario M5S 3E4 Canada

Abstract

Organic–inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge–transport layers. Here, in situ back‐contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits—in contrast with previously studied insulator‐based passivants—the use of a relatively thick passivating layer. It is shown that a flat‐band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1494202

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 14 Vol. 31; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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