skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Hall Effect Study of the kappa-(ET) 2X Family: Evidence for Mott-Anderson Localization.

Abstract

We investigate the dc resistivity and Hall effect of the quasi-two-dimensional organic materials κ-(ET) 2X, where X = Ag 2(CN) 3 and B(CN) 4 and compare them with the results for X = Cu-2(CN) 3. All three compounds are considered to be quantum-spin-disordered Mott insulators. Despite high similarities in chemical composition and crystal structure, large differences in the dc resistivity and Hall coefficient are found. While around room temperature the dc transport properties are dominantly determined by the strength of the electron correlations, upon reducing the temperature, dc transport happens by hopping due to inherent disorder. The most disordered compound with X = Cu 2(CN) 3 turns out to have the lowest dc resistivity and the highest charge carrier density, i.e., in the phase diagram it is located closest to the metal-insulator transition. The least disordered compound with X = B(CN) 4 shows the highest resistivity and the lowest carrier density, i.e., lies farthest from the metal-insulator transition. We explain such counterintuitive behavior within the theory of Mott-Anderson localization as a consequence of disorder-induced localized states within the correlation gap.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
Croatian Science Foundation; German Research Foundation (DFG); National Science Foundation (NSF)
OSTI Identifier:
1494059
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 99; Journal Issue: 4; Journal ID: ISSN 0163-1829
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English

Citation Formats

Culo, M., Tafra, E., Mihaljevic, B., Kuvezdic, M., Ivek, T., Hamzic, A., Tomic, S., Hiramatsu, T., Yoshida, Y., Saito, G., Schlueter, J. A., Dressel, M., Korin-Hamzic, B., and Curtiss, Larry A. Hall Effect Study of the kappa-(ET)2X Family: Evidence for Mott-Anderson Localization.. United States: N. p., 2019. Web. doi:10.1103/PhysRevB.99.045114.
Culo, M., Tafra, E., Mihaljevic, B., Kuvezdic, M., Ivek, T., Hamzic, A., Tomic, S., Hiramatsu, T., Yoshida, Y., Saito, G., Schlueter, J. A., Dressel, M., Korin-Hamzic, B., & Curtiss, Larry A. Hall Effect Study of the kappa-(ET)2X Family: Evidence for Mott-Anderson Localization.. United States. doi:10.1103/PhysRevB.99.045114.
Culo, M., Tafra, E., Mihaljevic, B., Kuvezdic, M., Ivek, T., Hamzic, A., Tomic, S., Hiramatsu, T., Yoshida, Y., Saito, G., Schlueter, J. A., Dressel, M., Korin-Hamzic, B., and Curtiss, Larry A. Tue . "Hall Effect Study of the kappa-(ET)2X Family: Evidence for Mott-Anderson Localization.". United States. doi:10.1103/PhysRevB.99.045114.
@article{osti_1494059,
title = {Hall Effect Study of the kappa-(ET)2X Family: Evidence for Mott-Anderson Localization.},
author = {Culo, M. and Tafra, E. and Mihaljevic, B. and Kuvezdic, M. and Ivek, T. and Hamzic, A. and Tomic, S. and Hiramatsu, T. and Yoshida, Y. and Saito, G. and Schlueter, J. A. and Dressel, M. and Korin-Hamzic, B. and Curtiss, Larry A.},
abstractNote = {We investigate the dc resistivity and Hall effect of the quasi-two-dimensional organic materials κ-(ET)2X, where X = Ag2(CN)3 and B(CN)4 and compare them with the results for X = Cu-2(CN)3. All three compounds are considered to be quantum-spin-disordered Mott insulators. Despite high similarities in chemical composition and crystal structure, large differences in the dc resistivity and Hall coefficient are found. While around room temperature the dc transport properties are dominantly determined by the strength of the electron correlations, upon reducing the temperature, dc transport happens by hopping due to inherent disorder. The most disordered compound with X = Cu2(CN)3 turns out to have the lowest dc resistivity and the highest charge carrier density, i.e., in the phase diagram it is located closest to the metal-insulator transition. The least disordered compound with X = B(CN)4 shows the highest resistivity and the lowest carrier density, i.e., lies farthest from the metal-insulator transition. We explain such counterintuitive behavior within the theory of Mott-Anderson localization as a consequence of disorder-induced localized states within the correlation gap.},
doi = {10.1103/PhysRevB.99.045114},
journal = {Physical Review, B: Condensed Matter},
issn = {0163-1829},
number = 4,
volume = 99,
place = {United States},
year = {2019},
month = {1}
}