Hall Effect Study of the kappa-(ET)2X Family: Evidence for Mott-Anderson Localization.

Culo, M.; Tafra, E.; Mihaljevic, B.; Kuvezdic, M.; Ivek, T.; Hamzic, A.; Tomic, S.; Hiramatsu, T.; Yoshida, Y.; Saito, G.; Schlueter, J. A.; Dressel, M.; Korin-Hamzic, B.; Curtiss, Larry A.

doi:10.1103/PhysRevB.99.045114

Title: Hall Effect Study of the kappa-(ET)₂X Family: Evidence for Mott-Anderson Localization.

Journal Article · Tue Jan 08 00:00:00 EST 2019 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.99.045114· OSTI ID:1494059

Culo, M.; Tafra, E.; Mihaljevic, B.; Kuvezdic, M.; Ivek, T.; Hamzic, A.; Tomic, S.; Hiramatsu, T.; Yoshida, Y.; Saito, G.; Schlueter, J. A.; Dressel, M.; Korin-Hamzic, B.; Curtiss, Larry A.

We investigate the dc resistivity and Hall effect of the quasi-two-dimensional organic materials κ-(ET)₂X, where X = Ag₂(CN)₃ and B(CN)₄ and compare them with the results for X = Cu-2(CN)₃. All three compounds are considered to be quantum-spin-disordered Mott insulators. Despite high similarities in chemical composition and crystal structure, large differences in the dc resistivity and Hall coefficient are found. While around room temperature the dc transport properties are dominantly determined by the strength of the electron correlations, upon reducing the temperature, dc transport happens by hopping due to inherent disorder. The most disordered compound with X = Cu₂(CN)₃ turns out to have the lowest dc resistivity and the highest charge carrier density, i.e., in the phase diagram it is located closest to the metal-insulator transition. The least disordered compound with X = B(CN)₄ shows the highest resistivity and the lowest carrier density, i.e., lies farthest from the metal-insulator transition. We explain such counterintuitive behavior within the theory of Mott-Anderson localization as a consequence of disorder-induced localized states within the correlation gap.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: Croatian Science Foundation; German Research Foundation (DFG); National Science Foundation (NSF)

DOE Contract Number:: AC02-06CH11357

OSTI ID:: 1494059

Journal Information:: Physical Review, B: Condensed Matter, Vol. 99, Issue 4; ISSN 0163-1829

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

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