Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Superlattice-enhanced silicon soft X-ray and charged particle detectors with nanosecond time response

Journal Article · · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
 [1];  [1];  [2];  [2];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. California Inst. of Technology (CalTech), Pasadena, CA (United States)

Here, silicon detectors are an essential measurement tool for Inertial Confinement Fusion and High-Energy-Density Physics Applications, where temporal response of the order of nanoseconds is essential. Soft X-rays (<1 keV), Ultraviolet light, and low-energy electrons (<10 keV) can provide essential information in diagnosing rapidly changing plasma conditions, but reducing the detector dead layer is essential to improving detector response for these shallowly absorbed particles. This paper details a study of silicon detector surface preparation methods such as ion implant parameters, and the addition of a quantum 2D superlattice, to produce fast detectors that are highly sensitive to shallowly absorbed radiation. Measurements of visible light quantum efficiency, electron responsivity, and pulsed x-ray response indicate that detectors with a 2-layer superlattice enjoy a significant benefit over equivalent detectors using an ion implant at the illuminated surface.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1492798
Report Number(s):
SAND2019-0455J; 671583
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Journal Name: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment Journal Issue: C Vol. 916; ISSN 0168-9002
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (11)

Optical properties of intrinsic silicon at 300 K journal January 1995
Measurements of the electron backscattering coefficient for quantitative EPMA in the energy range of 4 to 40 keV journal November 1979
Accurate determination of the ionization energy in semiconductor detectors journal February 1968
Stable, high quantum efficiency, UV-enhanced silicon photodiodes by arsenic diffusion journal January 1987
Stable silicon photodiodes for absolute intensity measurements in the VUV and soft X-ray regions journal May 1996
The single-line-of-sight, time-resolved x-ray imager diagnostic on OMEGA journal October 2018
One gigarad passivating nitrided oxides for 100% internal quantum efficiency silicon photodiodes journal January 1993
Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons journal December 1997
Superlattice-doped silicon detectors: progress and prospects conference July 2014
Redistribution of Diffused Boron in Silicon by Thermal Oxidation journal July 1964
Diffusion of Boron from Implanted Sources under Oxidizing Conditions journal January 1974

Cited By (1)

GaAs x-ray detectors with sub-nanosecond temporal response journal November 2019

Similar Records

Nano-Engineering of Detector Surfaces to Offer Unprecedented Imager Sensitivity to Soft X-rays and Low Energy Electrons
Technical Report · Sat Oct 19 00:00:00 EDT 2019 · OSTI ID:1570932

Novel Detectors For Single Atom Doping Of Quantum Computer Devices
Journal Article · Tue Aug 26 00:00:00 EDT 2003 · AIP Conference Proceedings · OSTI ID:20632637

Detector development for the abBA experiment
Journal Article · Fri Jul 01 00:00:00 EDT 2005 · Journal of Research of the National Institute of Standards and Technology · OSTI ID:1628766