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Strain-free polished channel-cut crystal monochromators: a new approach and results

Conference ·
DOI:https://doi.org/10.1117/12.2277605· OSTI ID:1491016
The use of channel-cut crystal monochromators has been traditionally limited to applications that can tolerate the rough surface quality from wet etching without polishing. We have previously presented and discussed the motivation for producing channel cut crystals with strain-free polished surfaces [1]. Afterwards, we have undertaken an effort to design and implement an automated machine for polishing channel-cut crystals. The initial effort led to inefficient results. Since then, we conceptualized, designed, and implemented a new version of the channel-cut polishing machine, now called CCHiRP (Channel-Cut High Resolution Polisher), also known as CCPM V2.0. The new machine design no longer utilizes Figure-8 motion that mimics manual polishing. Instead, the polishing is achieved by a combination of rotary and linear functions of two coordinated motion systems. Here we present the new design of C-CHiRP, its capabilities and features. Multiple channel-cut crystals polished using the C-CHiRP have been deployed into several beamlines at the Advanced Photon Source (APS). We present the measurements of surface finish, flatness, as well as topography results obtained at 1-BM of APS, as compared with results typically achieved when polishing flat-surface monochromator crystals using conventional polishing processes. Limitations of the current machine design, capabilities and considerations for strain-free polishing of highly complex crystals are also discussed, together with an outlook for future developments and improvements.
Research Organization:
Argonne National Laboratory (ANL)
Sponsoring Organization:
Argonne National Laboratory - Advanced Photon Source
DOE Contract Number:
AC02-06CH11357
OSTI ID:
1491016
Country of Publication:
United States
Language:
English

References (1)

The best of both worlds: automated CMP polishing of channel-cut monochromators conference September 2015

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