Semi-Dirac semimetal in silicene oxide

Zhong, Chengyong; Chen, Yuanping; Xie, Yuee; Sun, Yi-Yang; Zhang, Shengbai

doi:10.1039/c6cp08439g

Title: Semi-Dirac semimetal in silicene oxide

Journal Article · Sun Jan 01 00:00:00 EST 2017 · Physical Chemistry Chemical Physics

DOI:https://doi.org/10.1039/c6cp08439g· OSTI ID:1491011

^[1]; Chen, Yuanping ^[1]; Xie, Yuee ^[1]; Sun, Yi-Yang ^[2]; Zhang, Shengbai ^[2]

Xiangtan Univ. (China). School of Physics and Optoelectronics
Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Physics, Applied Physics, and Astronomy

A semi-Dirac semimetal is a material that exhibits linear band dispersion in one direction and quadratic band dispersion in the orthogonal direction and, therefore, hosts massless and massive fermions at the same point in the momentum space. While a number of interesting physical properties have been predicted in semi-Dirac semimetals, it has been rare to realize such materials in condensed matter. Based on the fact that some honeycomb materials are easily oxidized or chemically absorb other atoms, here, we theoretically propose an approach of modifying their band structures by covalent addition of group-VI elements and strain engineering. We predict a silicene oxide with the chemical formula of Si₂O to be a candidate semi-Dirac semimetal. Our approach is backed by the analysis and understanding of the effect of p-orbital frustration on the band structure of graphene-like materials.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0002623; AC02-05CH11231

OSTI ID:: 1491011

Journal Information:: Physical Chemistry Chemical Physics, Vol. 19, Issue 5; ISSN 1463-9076

Country of Publication:: United States

Language:: English

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