Optical and Electronic Anisotropies in Perovskitoid Crystals of Cs3Bi2I9 Studies of Nuclear Radiation Detection

Sun, Qihao; Xu, Yadong; Zhang, Hongjian; Xiao, Bao; Liu, Xin; Dong, Jiangpeng; Cheng, Yuanbo; Zhang, Binbin; Jie, Wanqi; Kanatzidis, Mercouri G.

doi:10.1039/c8ta09525f

Optical and Electronic Anisotropies in Perovskitoid Crystals of Cs₃Bi₂I₉ Studies of Nuclear Radiation Detection

Journal Article · Thu Oct 25 00:00:00 EDT 2018 · Journal of Materials Chemistry. A

DOI:https://doi.org/10.1039/c8ta09525f· OSTI ID:1490335

^[1]; ^[2]; ^[3]; Xiao, Bao ^[3]; Liu, Xin ^[3]; Dong, Jiangpeng ^[3]; Cheng, Yuanbo ^[3]; Zhang, Binbin ^[1]; Jie, Wanqi ^[1]; ^[4]

State Key Laboratory of Solidification Processing, Xi'an (China); Northwestern Polytechnical Univ., Xi'an (China)
State Key Laboratory of Solidification Processing, Xi'an (China); Northwestern Polytechnical Univ., Xi'an (China); Northwestern Univ., Evanston, IL (United States)
Northwestern Polytechnical Univ., Xi'an (China)
Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)

The halide perovskitoid compound Cs₃Bi₂I₉ (CBI) has attracted considerable interest as a semiconductor because of its outstanding stability and reduced toxicity compared with lead-based halide perovskites. Here, we report the growth of nuclear radiation detection grade CBI bulk crystals (Φ 15 × 60 mm³) with a high resistivity of over 10¹⁰ Ω cm using a modified vertical Bridgman method. Because of their layered crystal structures we investigated the anisotropy in the optical and electrical properties using different crystal orientations. The CBI₍₀₀₁₎ sample exhibits a resistivity of ~10¹² Ω cm compared to ~10¹⁰ Ω cm for the CBI₍₁₀₀₎ sample. This is due to the anisotropic mobility in the two crystallographic directions. Using 425 nm LED (~200 mW cm^–2) illumination CBI₍₀₀₁₎ possesses a superior optical response with a switching ratio of over 40, which is critically higher than that of CBI₍₁₀₀₎ (<2). Detectors of 2 mm thickness show a capability of detecting ²⁴¹Am@5.49 MeV α particles, with good peak discrimination. A full width at half maximum (FWHM) of 32% was obtained under a bias of 560 V. Simultaneously, the electron mobility and mobility lifetime (μτ) were calculated to be 6.10 cm² V^–1 s^–1 and 2.03 × 10^–5 cm V^–1, respectively. First-principles density functional theory calculations confirm the crystallographic anisotropy of the carrier effective masses. Additionally, a significant X-ray sensitivity of 111.9 μC Gy^–1 cm^–2 for a CBI detector was observed, under 80 kVp X-rays at an electrical field of 450 V cm^–1.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: Fundamental Research Funds for the Central Universities; National Key Research and Development Program of China; National Natural Science Foundation of China; U. S. Department of Homeland Security; USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1490335

Journal Information:: Journal of Materials Chemistry. A, Journal Name: Journal of Materials Chemistry. A Journal Issue: 46 Vol. 6; ISSN JMCAET; ISSN 2050-7488

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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