Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

Wang, Gang; Zhang, Miao; Chen, Da; Guo, Qinglei; Feng, Xuefei; Niu, Tianchao; Liu, Xiaosong; Li, Ang; Lai, Jiawei; Sun, Dong; Liao, Zhimin; Wang, Yongqiang; Chu, Paul K.; Ding, Guqiao; Xie, Xiaoming; Di, Zengfeng; Wang, Xi

doi:10.1038/s41467-018-07555-6

Title: Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

Journal Article · Wed Dec 05 00:00:00 EST 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-018-07555-6· OSTI ID:1489971

Wang, Gang ^[1]; Zhang, Miao ^[2]; Chen, Da ^[1]; Guo, Qinglei ^[2]; Feng, Xuefei ^[2]; Niu, Tianchao ^[2]; Liu, Xiaosong ^[2]; Li, Ang ^[2]; Lai, Jiawei ^[3];

^[3];

^[3]; Wang, Yongqiang ^[4];

^[5]; Ding, Guqiao ^[2]; Xie, Xiaoming ^[2]; Di, Zengfeng ^[2]; Wang, Xi ^[2]

Chinese Academy of Sciences (CAS), Beijing (China); Ningbo Univ. (China)
Chinese Academy of Sciences (CAS), Beijing (China)
Peking Univ., Beijing (China)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
City Univ. of Hong Kong (China)

Lateral graphene p–n junctions are important since they constitute the core components in a variety of electronic/photonic systems. However, formation of lateral graphene p–n junctions with a controllable doping levels is still a great challenge due to the monolayer feature of graphene. Herein, by performing selective ion implantation and in situ growth by dynamic chemical vapor deposition, direct formation of seamless lateral graphene p–n junctions with spatial control and tunable doping is demonstrated. Uniform lattice substitution with heteroatoms is achieved in both the boron-doped and nitrogen-doped regions and photoelectrical assessment reveals that the seamless lateral p–n junctions exhibit a distinct photocurrent response under ambient conditions. As ion implantation is a standard technique in microelectronics, our study suggests a simple and effective strategy for mass production of graphene p–n junctions with batch capability and spatial controllability, which can be readily integrated into the production of graphene-based electronics and photonics.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 1489971

Report Number(s):: LA-UR-18-31496

Journal Information:: Nature Communications, Vol. 9, Issue 1; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 57 works

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