skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys

Journal Article · · Chemistry of Materials

Alloying in two-dimensional (2D) transition metal dichalcogenides (TMDCs) has allowed band gap engineering and phase transformation, as well as modulation of electronic properties. However, most of the efforts have been focused on alloying between transition metal cations. Among those that emphasize alloying between chalcogenide anions, the sulfide–selenide combinations are popular with a few reports on selenide–telluride combinations. In this work, we show a facile chemical vapor deposition method to obtain stable alloying between selenide and telluride anions in monolayer MoSe2(1–x)Te2x alloy. These alloys retain the monolayer 2H symmetry and show good photoluminescence and band gap tunability in the near-infrared region. The nature and percentage of alloying is further confirmed and quantified via AFM, XPS, and HAADF-STEM imaging and polarized Raman spectroscopy. The stability of the two chalcogens in the monolayer 2H lattice is also consistent with thermodynamic phase mixing via DFT simulations. In conclusion, the work demonstrates a straightforward method of synthesizing telluride-based 2D TMDC alloys for further studies and emerging applications.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1489547
Journal Information:
Chemistry of Materials, Vol. 30, Issue 20; ISSN 0897-4756
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 30 works
Citation information provided by
Web of Science

References (50)

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides journal November 2012
Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2 journal April 2014
Atomically Thin MoS2 A New Direct-Gap Semiconductor journal September 2010
Chemical Vapor Deposition Growth of Monolayer WSe 2 with Tunable Device Characteristics and Growth Mechanism Study journal May 2015
Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils journal October 2015
Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS 2 ) journal July 2015
Controlled Synthesis of Atomically Thin 1T-TaS 2 for Tunable Charge Density Wave Phase Transitions journal October 2016
Metallic VS 2 Monolayer: A Promising 2D Anode Material for Lithium Ion Batteries journal November 2013
Two-dimensional metallic NbS 2 : growth, optical identification and transport properties journal May 2016
Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloy journal March 2014
Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides journal March 2016
Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors journal September 2016
Structural Phase Transitions by Design in Monolayer Alloys journal December 2015
Phase engineering of transition metal dichalcogenides journal January 2015
Re Doping in 2D Transition Metal Dichalcogenides as a New Route to Tailor Structural Phases and Induced Magnetism journal October 2017
Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap journal July 2017
Spin-orbit engineering in transition metal dichalcogenide alloy monolayers journal December 2015
Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties journal November 2012
Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing journal April 2013
Properties of Individual Dopant Atoms in Single-Layer MoS 2 : Atomic Structure, Migration, and Enhanced Reactivity journal February 2014
Possible doping strategies for MoS 2 monolayers: An ab initio study journal August 2013
Doping against the Native Propensity of MoS 2 : Degenerate Hole Doping by Cation Substitution journal November 2014
p-type doping of MoS 2 thin films using Nb journal March 2014
Nb-doped single crystalline MoS 2 field effect transistor journal April 2015
Manganese Doping of Monolayer MoS 2 : The Substrate Is Critical journal September 2015
Influence of rhenium on the structural and optical properties of molybdenum disulfide journal February 2015
Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide journal December 2013
Metal-Semiconductor Phase-Transition in WSe 2(1- x ) Te 2 x Monolayer journal November 2016
Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe 2 journal September 2015
Monolayer Single-Crystal 1T′-MoTe 2 Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect journal June 2016
Anisotropic electronic, mechanical, and optical properties of monolayer WTe 2 journal February 2016
Signature of type-II Weyl semimetal phase in MoTe2 journal January 2017
Bandgap opening in few-layered monoclinic MoTe2 journal May 2015
Room Temperature Semiconductor–Metal Transition of MoTe 2 Thin Films Engineered by Strain journal December 2015
Large, non-saturating magnetoresistance in WTe2 journal September 2014
Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe 2 journal January 2017
Quantum spin Hall state in monolayer 1T'-WTe2 journal June 2017
Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy journal September 2017
Structural phase transition in monolayer MoTe2 driven by electrostatic doping journal October 2017
Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe 2 and W x Mo 1– x Te 2 Alloy journal July 2016
Substrate dependent electronic structure variations of van der Waals heterostructures of MoSe 2 or MoSe 2(1− x ) Te 2 x grown by van der Waals epitaxy journal May 2017
Anisotropic Ordering in 1T′ Molybdenum and Tungsten Ditelluride Layers Alloyed with Sulfur and Selenium journal January 2018
Interaction potential for aluminum nitride: A molecular dynamics study of mechanical and thermal properties of crystalline and amorphous aluminum nitride journal February 2011
Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2 journal January 2013
Phonons in single-layer and few-layer MoS 2 and WS 2 journal October 2011
Intrinsic Phonon Bands in High-Quality Monolayer T ′ Molybdenum Ditelluride journal December 2016
Generalized Gradient Approximation Made Simple journal October 1996
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Fast Parallel Algorithms for Short-Range Molecular Dynamics journal March 1995

Cited By (2)

Large-area synthesis of monolayer MoTe x Se 2- x alloys by chemical vapor deposition journal August 2019
Direct/indirect band gap tunability in van der Waals heterojunctions based on ternary 2D materials Mo 1− x W x Y 2 journal September 2019

Figures / Tables (5)


Similar Records

Phase‐Dependent Band Gap Engineering in Alloys of Metal‐Semiconductor Transition Metal Dichalcogenides
Journal Article · Tue Sep 22 00:00:00 EDT 2020 · Advanced Functional Materials · OSTI ID:1489547

Dynamics and Spin-Valley Locking Effects in Monolayer Transition Metal Dichalcogenides
Journal Article · Wed Aug 01 00:00:00 EDT 2018 · Nano Letters · OSTI ID:1489547

Structural Flexibility and Alloying in Ultrathin Transition-Metal Chalcogenide Nanowires
Journal Article · Mon Jan 18 00:00:00 EST 2016 · ACS Nano · OSTI ID:1489547

Related Subjects