Thin-film ferroelectric materials and their applications

Martin, Lane W.; Rappe, Andrew M.

doi:10.1038/natrevmats.2016.87

Title: Thin-film ferroelectric materials and their applications

Journal Article · Tue Nov 15 00:00:00 EST 2016 · Nature Reviews. Materials

DOI:https://doi.org/10.1038/natrevmats.2016.87· OSTI ID:1489262

Martin, Lane W. ^[1]; Rappe, Andrew M. ^[2]

Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Univ. of Pennsylvania, Philadelphia, PA (United States). The Makineni Theoretical Laboratories, Dept. of Chemistry

Ferroelectric materials, because of their robust spontaneous electrical polarization, are widely used in various applications. Recent advances in modelling, synthesis and characterization techniques are spurring unprecedented advances in the study of these materials. In this Review, we focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways. We explore how the study of ferroelectric materials has expanded our understanding of fundamental effects, enabled the discovery of novel phases and physics, and allowed unprecedented control of materials properties. We discuss several exciting possibilities for the development of new devices, including those in electronic, thermal and photovoltaic applications, and transduction sensors and actuators. We conclude with a brief survey of the different directions that the field may expand to over the coming years.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0012375; FG02-07ER46431; FG02-07ER15920

OSTI ID:: 1489262

Journal Information:: Nature Reviews. Materials, Vol. 2, Issue 2; ISSN 2058-8437

Country of Publication:: United States

Language:: English

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