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Title: Stacking-Dependent Magnetism in Bilayer CrI 3

Abstract

Here we report the connection between the stacking order and magnetic properties of bilayer CrI 3 using first-principles calculations. We show that the stacking order defines the magnetic ground state. By changing the interlayer stacking order, one can tune the interlayer exchange interaction between antiferromagnetic and ferromagnetic. To measure the predicted stacking-dependent magnetism, we propose using linear magnetoelectric effect. Our results not only gives a possible explanation for the observed antiferromagnetism in bilayer CrI 3 but also have direct implications in heterostructures made of two-dimensional magnets.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3];  [1];  [4]
  1. Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Univ. of Washington, Seattle, WA (United States). Dept. of Physics, and Dept. of Materials Science and Engineering
  4. Carnegie Mellon Univ., Pittsburgh, PA (United States). Dept. of Physics
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1488712
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 12; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Sivadas, Nikhil, Okamoto, Satoshi, Xu, Xiaodong, Fennie, Craig. J., and Xiao, Di. Stacking-Dependent Magnetism in Bilayer CrI3. United States: N. p., 2018. Web. doi:10.1021/acs.nanolett.8b03321.
Sivadas, Nikhil, Okamoto, Satoshi, Xu, Xiaodong, Fennie, Craig. J., & Xiao, Di. Stacking-Dependent Magnetism in Bilayer CrI3. United States. doi:10.1021/acs.nanolett.8b03321.
Sivadas, Nikhil, Okamoto, Satoshi, Xu, Xiaodong, Fennie, Craig. J., and Xiao, Di. Thu . "Stacking-Dependent Magnetism in Bilayer CrI3". United States. doi:10.1021/acs.nanolett.8b03321.
@article{osti_1488712,
title = {Stacking-Dependent Magnetism in Bilayer CrI3},
author = {Sivadas, Nikhil and Okamoto, Satoshi and Xu, Xiaodong and Fennie, Craig. J. and Xiao, Di},
abstractNote = {Here we report the connection between the stacking order and magnetic properties of bilayer CrI3 using first-principles calculations. We show that the stacking order defines the magnetic ground state. By changing the interlayer stacking order, one can tune the interlayer exchange interaction between antiferromagnetic and ferromagnetic. To measure the predicted stacking-dependent magnetism, we propose using linear magnetoelectric effect. Our results not only gives a possible explanation for the observed antiferromagnetism in bilayer CrI3 but also have direct implications in heterostructures made of two-dimensional magnets.},
doi = {10.1021/acs.nanolett.8b03321},
journal = {Nano Letters},
issn = {1530-6984},
number = 12,
volume = 18,
place = {United States},
year = {2018},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 8, 2019
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