Extreme asymmetry of Néel domain walls in multilayered films of the dilute magnetic semiconductor (Ga,Mn)(As,P)

Vlasko-Vlasov, V. K.; Kwok, W. -K.; Dong, S.; Liu, X.; Dobrowolska, M.; Furdyna, J. K.

doi:10.1103/PhysRevB.98.180411

Extreme asymmetry of Néel domain walls in multilayered films of the dilute magnetic semiconductor (Ga,Mn)(As,P)

Journal Article · Thu Nov 29 00:00:00 EST 2018 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.98.180411· OSTI ID:1488404

Vlasko-Vlasov, V. K. ^[1]; Kwok, W. -K. ^[1]; Dong, S. ^[2]; Liu, X. ^[2]; Dobrowolska, M. ^[2]; Furdyna, J. K. ^[2]

Argonne National Lab. (ANL), Argonne, IL (United States)
Univ. of Notre Dame, Notre Dame, IN (United States)

Here, we report on unconventional perfectly shaped, fully asymmetric ~90° Néel domain walls in multilayered films of the diluted ferromagnetic semiconductor (Ga,Mn)(As,P) with a stepwise variation of P doping. Our results contradict micromagnetic calculations, which favor symmetric domain walls due to crystallographic anisotropy and stray field energy. We demonstrate that both the puzzling uniaxial in-plane anisotropy in the tetragonal multilayered film and the asymmetry of the domain walls could result from Dzyaloshinskii-Moriya interactions that are enhanced by the multiple sharp interfaces between the layers and from anisotropic nonrelativistic exchange coupling. Our finding shows that digital variations of composition during the molecular beam epitaxy can be used to tune the anisotropy and chirality of magnetic multilayers.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1488404

Alternate ID(s):: OSTI ID: 1483915

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 18 Vol. 98; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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