Silicon-Phosphorene Nanocavity-Enhanced Optical Emission at Telecommunications Wavelengths

Husko, Chad; Kang, Joohoon; Moille, Gregory; Wood, Joshua D.; Han, Zheng; Gosztola, David; Ma, Xuedan; Combrié, Sylvain; De Rossi, Alfredo; Hersam, Mark C.; Checoury, Xavier; Guest, Jeffrey R.

doi:10.1021/acs.nanolett.8b03037

Title: Silicon-Phosphorene Nanocavity-Enhanced Optical Emission at Telecommunications Wavelengths

Journal Article · Tue Sep 18 00:00:00 EDT 2018 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.8b03037· OSTI ID:1487134

^[1];

^[2]; Moille, Gregory ^[3]; Wood, Joshua D. ^[2]; Han, Zheng ^[3];

^[1]; Ma, Xuedan ^[1]; Combrié, Sylvain ^[4]; De Rossi, Alfredo ^[5];

^[2]; Checoury, Xavier ^[6];

^[1]

Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
Centre National de la Recherche Scientifique (CNRS), Paris (France). Centre de Nanosciences et de Nanotechnologies
Thales Research and Technology, Palaiseau (France)
Thales Research and Technology, Palaiseau (France)
Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, Bât. 220, 91405 Orsay cedex, France

Generating and amplifying light in silicon (Si) continues to attract significant attention due to the possibility of integrating optical and electronic components in a single material platform. Unfortunately, silicon is an indirect band gap material and therefore an inefficient emitter of light. With the rise of integrated photonics, the search for silicon-based light sources has evolved from a scientific quest to a major technological bottleneck for scalable, CMOS-compatible, light sources. Recently, emerging two-dimensional materials have opened the prospect of tailoring material properties based on atomic layers. Few-layer phosphorene, which is isolated through exfoliation from black phosphorus (BP), is a great candidate to partner with silicon due to its layer-tunable direct band gap in the near-infrared where silicon is transparent. Here we demonstrate a hybrid silicon optical emitter composed of few-layer phosphorene nanomaterial flakes coupled to silicon photonic crystal resonators. We show single-mode emission in the telecommunications band of 1.55 μm ($$E_g$$ = 0.8 eV) under continuous wave optical excitation at room temperature. The solution-processed few-layer BP flakes enable tunable emission across a broad range of wavelengths and the simultaneous creation of multiple devices. Our work highlights the versatility of the Si-BP material platform for creating optically active devices in integrated silicon chips.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1487134

Journal Information:: Nano Letters, Vol. 18, Issue 10; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 20 works

Citation information provided by
Web of Science

References (38)

Single-chip microprocessor that communicates directly using light Sun, Chen; Wade, Mark T.; Lee, Yunsup Nature, Vol. 528, Issue 7583 https://doi.org/10.1038/nature16454	journal	December 2015
1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+ Fujii, Minoru; Yoshida, Masato; Kanzawa, Yoshihiko Applied Physics Letters, Vol. 71, Issue 9 https://doi.org/10.1063/1.119624	journal	September 1997
Optical gain in silicon nanocrystals Pavesi, L.; Dal Negro, L.; Mazzoleni, C. Nature, Vol. 408, Issue 6811, p. 440-444 https://doi.org/10.1038/35044012	journal	November 2000
A continuous-wave Raman silicon laser Rong, Haisheng; Jones, Richard; Liu, Ansheng Nature, Vol. 433, Issue 7027 https://doi.org/10.1038/nature03346	journal	February 2005
An electrically pumped germanium laser Camacho-Aguilera, Rodolfo E.; Cai, Yan; Patel, Neil Optics Express, Vol. 20, Issue 10 https://doi.org/10.1364/OE.20.011316	journal	January 2012
A micrometre-scale Raman silicon laser with a microwatt threshold Takahashi, Yasushi; Inui, Yoshitaka; Chihara, Masahiro Nature, Vol. 498, Issue 7455 https://doi.org/10.1038/nature12237	journal	June 2013
A continuous-wave hybrid AlGaInAs-silicon evanescent laser Fang, A. W.; Park, Hyundai; Jones, R. IEEE Photonics Technology Letters, Vol. 18, Issue 10, p. 1143-1145 https://doi.org/10.1109/LPT.2006.874690	journal	May 2006
Recent progress in lasers on silicon Liang, Di; Bowers, John E. Nature Photonics, Vol. 4, Issue 8 https://doi.org/10.1038/nphoton.2010.167	journal	July 2010
Room-temperature InP distributed feedback laser array directly grown on silicon Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna Nature Photonics, Vol. 9, Issue 12 https://doi.org/10.1038/nphoton.2015.199	journal	October 2015
Electrically pumped continuous-wave III–V quantum dot lasers on silicon Chen, Siming; Li, Wei; Wu, Jiang Nature Photonics, Vol. 10, Issue 5 https://doi.org/10.1038/nphoton.2016.21	journal	March 2016
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Producing air-stable monolayers of phosphorene and their defect engineering Pei, Jiajie; Gai, Xin; Yang, Jiong Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms10450	journal	January 2016
Direct observation of the layer-dependent electronic structure in phosphorene Li, Likai; Kim, Jonghwan; Jin, Chenhao Nature Nanotechnology, Vol. 12, Issue 1 https://doi.org/10.1038/nnano.2016.171	journal	September 2016
Black phosphorus field-effect transistors Li, Likai; Yu, Yijun; Ye, Guo Jun Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.35	journal	March 2014
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics Xia, Fengnian; Wang, Han; Jia, Yichen Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5458	journal	July 2014
Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current Youngblood, Nathan; Chen, Che; Koester, Steven J. Nature Photonics, Vol. 9, Issue 4 https://doi.org/10.1038/nphoton.2015.23	journal	March 2015
Microfiber-based few-layer black phosphorus saturable absorber for ultra-fast fiber laser Luo, Zhi-Chao; Liu, Meng; Guo, Zhi-Nan Optics Express, Vol. 23, Issue 15 https://doi.org/10.1364/OE.23.020030	journal	January 2015
Regenerative oscillation and four-wave mixing in graphene optoelectronics Gu, T.; Petrone, N.; McMillan, J. F. Nature Photonics, Vol. 6, Issue 8 https://doi.org/10.1038/nphoton.2012.147	journal	July 2012
Monolayer semiconductor nanocavity lasers with ultralow thresholds Wu, Sanfeng; Buckley, Sonia; Schaibley, John R. Nature, Vol. 520, Issue 7545 https://doi.org/10.1038/nature14290	journal	March 2015
Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity Li, Yongzhuo; Zhang, Jianxing; Huang, Dandan Nature Nanotechnology, Vol. 12, Issue 10 https://doi.org/10.1038/nnano.2017.128	journal	July 2017
1305 nm Few-Layer MoTe ₂ -on-Silicon Laser-Like Emission Fang, Hanlin; Liu, Jin; Li, Hongji Laser & Photonics Reviews, Vol. 12, Issue 6 https://doi.org/10.1002/lpor.201800015	journal	May 2018
High quality factor in a two-dimensional photonic crystal cavity on silicon-on-insulator Han, Zheng; Checoury, Xavier; Haret, Laurent-Daniel Optics Letters, Vol. 36, Issue 10 https://doi.org/10.1364/OL.36.001749	journal	January 2011
Resonance Absorption by Nuclear Magnetic Moments in a Solid Purcell, E. M.; Torrey, H. C.; Pound, R. V. Physical Review, Vol. 69, Issue 1-2, p. 37-38 https://doi.org/10.1103/PhysRev.69.37	journal	January 1946
Stable aqueous dispersions of optically and electronically active phosphorene Kang, Joohoon; Wells, Spencer A.; Wood, Joshua D. Proceedings of the National Academy of Sciences, Vol. 113, Issue 42 https://doi.org/10.1073/pnas.1602215113	journal	April 2016
Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation Wood, Joshua D.; Wells, Spencer A.; Jariwala, Deep Nano Letters, Vol. 14, Issue 12 https://doi.org/10.1021/nl5032293	journal	November 2014
Photooxidation and quantum confinement effects in exfoliated black phosphorus Favron, Alexandre; Gaufrès, Etienne; Fossard, Frédéric Nature Materials, Vol. 14, Issue 8 https://doi.org/10.1038/nmat4299	journal	May 2015
Environmental instability of few-layer black phosphorus Island, Joshua O.; Steele, Gary A.; Zant, Herre S. J. van der 2D Materials, Vol. 2, Issue 1 https://doi.org/10.1088/2053-1583/2/1/011002	journal	January 2015
Toward air-stable multilayer phosphorene thin-films and transistors Kim, Joon-Seok; Liu, Yingnan; Zhu, Weinan Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep08989	journal	March 2015
Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry Ryder, Christopher R.; Wood, Joshua D.; Wells, Spencer A. Nature Chemistry, Vol. 8, Issue 6 https://doi.org/10.1038/nchem.2505	journal	May 2016
On the linewidth of microcavity lasers Björk, Gunnar; Karlsson, Anders; Yamamoto, Yoshihisa Applied Physics Letters, Vol. 60, Issue 3 https://doi.org/10.1063/1.106693	journal	January 1992
High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted Matsuo, Shinji; Shinya, Akihiko; Kakitsuka, Takaaki Nature Photonics, Vol. 4, Issue 9 https://doi.org/10.1038/nphoton.2010.177	journal	August 2010
Static and dynamic spectroscopy of $(Al, Ga) As ∕ Ga As$ microdisk lasers with interface fluctuation quantum dots Wang, W. H.; Ghosh, S.; Mendoza, F. M. Physical Review B, Vol. 71, Issue 15 https://doi.org/10.1103/PhysRevB.71.155306	journal	April 2005
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus Qiao, Jingsi; Kong, Xianghua; Hu, Zhi-Xin Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5475	journal	July 2014
Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus Liao, Bolin; Zhao, Huan; Najafi, Ebrahim Nano Letters, Vol. 17, Issue 6 https://doi.org/10.1021/acs.nanolett.7b00897	journal	May 2017
Electric field effect in ultrathin black phosphorus Koenig, Steven P.; Doganov, Rostislav A.; Schmidt, Hennrik Applied Physics Letters, Vol. 104, Issue 10 https://doi.org/10.1063/1.4868132	journal	March 2014
Solution-Based Processing of Optoelectronically Active Indium Selenide Kang, Joohoon; Wells, Spencer A.; Sangwan, Vinod K. Advanced Materials, Vol. 30, Issue 38 https://doi.org/10.1002/adma.201802990	journal	August 2018
Solution-Based Processing of Monodisperse Two-Dimensional Nanomaterials Kang, Joohoon; Sangwan, Vinod K.; Wood, Joshua D. Accounts of Chemical Research, Vol. 50, Issue 4 https://doi.org/10.1021/acs.accounts.6b00643	journal	February 2017
Hybrid indium phosphide-on-silicon nanolaser diode Crosnier, Guillaume; Sanchez, Dorian; Bouchoule, Sophie Nature Photonics, Vol. 11, Issue 5 https://doi.org/10.1038/nphoton.2017.56	journal	April 2017

Cited By (1)

2D–Organic Hybrid Heterostructures for Optoelectronic Applications Sun, Jia; Choi, Yongsuk; Choi, Young Jin Advanced Materials, Vol. 31, Issue 34 https://doi.org/10.1002/adma.201803831	journal	February 2019