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Title: Radiation Response of AlGaN-Channel HEMTs

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1485847
Alternate Identifier(s):
OSTI ID: 1485846; OSTI ID: 1487424
Report Number(s):
SAND-2018-11424J; SAND-2018-13231J; SAND-2018-7513J
Journal ID: ISSN 0018-9499; 669405
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 66; Journal Issue: 1; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; Aluminum Gallium Nitride (A1GaN); Aluminum Nitride (AIN); burnout, displacement damage (DD), heavy ion; HEMT; High Electron Mobility Transistor; failure analysis; Gallium Nitride (GaN); heavy ions; heavy ion testing; power; proton; radiation effects; radiation effects in devices; radiation hardness assurance; radiation-hardness assurance testing; semiconductor device breakdown; semiconductor device radiation effects; silicon, single-event burnout (SEB); single-event effects (SEEs); Total Ionizing Dose (TID)

Citation Formats

Martinez, J., King, M. P., Baca, A. G., Allerman, A. A., Armstrong, A. A., Klein, B., Douglas, E. A., Kaplar, R. J., and Swanson, S. E. Radiation Response of AlGaN-Channel HEMTs. United States: N. p., 2018. Web. doi:10.1109/TNS.2018.2885526.
Martinez, J., King, M. P., Baca, A. G., Allerman, A. A., Armstrong, A. A., Klein, B., Douglas, E. A., Kaplar, R. J., & Swanson, S. E. Radiation Response of AlGaN-Channel HEMTs. United States. doi:10.1109/TNS.2018.2885526.
Martinez, J., King, M. P., Baca, A. G., Allerman, A. A., Armstrong, A. A., Klein, B., Douglas, E. A., Kaplar, R. J., and Swanson, S. E. Mon . "Radiation Response of AlGaN-Channel HEMTs". United States. doi:10.1109/TNS.2018.2885526. https://www.osti.gov/servlets/purl/1485847.
@article{osti_1485847,
title = {Radiation Response of AlGaN-Channel HEMTs},
author = {Martinez, J. and King, M. P. and Baca, A. G. and Allerman, A. A. and Armstrong, A. A. and Klein, B. and Douglas, E. A. and Kaplar, R. J. and Swanson, S. E.},
abstractNote = {Abstract not provided.},
doi = {10.1109/TNS.2018.2885526},
journal = {IEEE Transactions on Nuclear Science},
issn = {0018-9499},
number = 1,
volume = 66,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

TABLE I: TABLE I:: ION SPECIES WITH INCIDENT ENERGIES, CALCULATED LETS, AND CALCULATED RANGES

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