OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET
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December 2016 |
Nanotexturing of Conjugated Polymers via One-Step Maskless Oxygen Plasma Etching for Enhanced Tunable Wettability
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June 2017 |
Static I ‐ V characteristics of static induction transistors
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March 1982 |
Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer
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June 2008 |
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
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April 2017 |
AlGaN/GaN current aperture vertical electron transistors with regrown channels
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February 2004 |
Fabrication of polymer nanowires via maskless O 2 plasma etching
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March 2014 |
Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates
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July 2011 |
Materials and processing issues in vertical GaN power electronics
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May 2018 |
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
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December 2017 |
High-frequency high-power static induction transistor
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March 1978 |
Reliability and parasitic issues in GaN-based power HEMTs: a review
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August 2016 |
Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics
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April 2006 |
A first-order theory of the static induction transistor
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December 1987 |
Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range
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May 2012 |
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)
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May 2018 |
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
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May 2018 |
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
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September 2006 |
Will We See Gigahertz Organic Transistors?
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January 2018 |
Design optimization of 600 V SiC SITs for high power and high frequency operation
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January 2005 |
Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure
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October 2013 |
Design and fabrication of a 1.2 kV GaN-based MOS vertical transistor for single chip normally off operation: Design and fabrication of a 1.2-kV GaN-based MOS vertical transistor
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June 2016 |
GaN Power Transistors on Si Substrates for Switching Applications
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July 2010 |
Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes
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February 2016 |
High electron mobility transistor based on a GaN‐AlxGa 1−xN heterojunction
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August 1993 |
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
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June 2013 |
Electrical characteristics of high performance Au/n-GaN schottky diodes
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November 1998 |
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
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January 1994 |
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues
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September 2005 |
Molybdenum work function determined by electron emission microscopy
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November 1971 |
High Breakdown ( >1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
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September 2010 |
Characteristics of static induction transistors: Effects of series resistance
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July 1978 |
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
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February 2008 |
Extremely Low ON-Resistance SiC Cascode Configuration Using Buried-Gate Static Induction Transistor
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December 2018 |
Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
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January 2014 |
Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process
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November 2017 |
A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide
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December 2000 |
A study of temperature dependent current–voltage (I–V–T) characteristics in Ni/sol–gel β-Ga2O3/n-GaN structure
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May 2018 |
Straight and Smooth Etching of GaN (1\bar100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques
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May 2006 |
700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)
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November 2006 |
Electron affinity of AlxGa1−xN(0001) surfaces
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April 2001 |
A review of SiC static induction transistor development for high-frequency power amplifiers
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May 2002 |
Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials
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June 2018 |
An Investigation on Border Traps in III–V MOSFETs With an In 0.53 Ga 0.47 As Channel
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November 2015 |
Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology
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October 2013 |
Field-effect transistor versus analog transistor (static induction transistor)
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April 1975 |
Gallium nitride devices for power electronic applications
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June 2013 |
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
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January 2012 |