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Manipulating thermal and electronic transports in thermoelectric Bi 2 Te 3 nanowires by porphyrin adsorption

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.5046385· OSTI ID:1483976
 [1];  [2];  [3];  [4];  [5];  [3];  [2];  [6]
  1. New Mexico State Univ., Las Cruces, NM (United States)
  2. Technion - Israel Institute of Technology, Haifa (Israel)
  3. Indiana Univ., Bloomington, IN (United States)
  4. Univ. of New Mexico, Albuquerque, NM (United States)
  5. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  6. New Mexico State Univ., Las Cruces, NM (United States); Manhattan College, Riverdale, NY (United States)

We report decoupling the electronic thermal and electrical conductivities is one of the limitations hindering a breakthrough in thermoelectric efficiency. After a conformal surface coating of bismuth telluride nanowires (Bi2Te3 NWs) by porphyrins, the thermal conductivity increases from 0.8 to 1.0 Wm-1K-1 at 300 K without any obvious change in electrical conductivity. Density Functional Theory (DFT) calculations assisted by Boltzmann Transport Equation (BTE) simulations of electronic transport properties indicate that the electronic thermal transport is enhanced by the depletion of surface charge carriers, which results in transition from metallic to semiconducting behavior. Thus, the adsorption of porphyrin onto the Bi2Te3 NWs layer suppresses the surface electronic conduction, resulting in thermal electronic conduction dictated by the bulk of the NW. In conclusion, the results mean that electronic thermal transport can be decoupled from the electrical conductivity by changing the density of surface states on Bi2Te3 NWs.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1483976
Report Number(s):
SAND--2018-11180J; 669576
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 10 Vol. 8; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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