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III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

Journal Article · · Optical Materials Express
DOI:https://doi.org/10.1364/OME.8.003543· OSTI ID:1483968
 [1];  [2];  [2];  [2];  [3]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Department of Electrical Engineering
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States). Department of Electrical and Computer Engineering

We demonstrate a top-down fabrication strategy for creating a III-nitride hole array photonic crystal (PhC) with embedded quantum wells (QWs). Our photoelectrochemical (PEC) etching technique is highly bandgap selective, permitting the removal of QWs with well-defined indium (In) concentration. Room-temperature micro-photoluminescence (μ-PL) measurements confirm the removal of one multiple quantum well (MQW) while preserving a QW of differing In concentration. Moreover, PhC cavity resonances, wholly unobservable before, are present following PEC etching. Our results indicate an interesting route for creating III-nitride membranes with tailorable emission wavelengths. Our top-down fabrication approach offers exciting opportunities for III-nitride based light emitters.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1483968
Report Number(s):
SAND--2018-12609J; 668736
Journal Information:
Optical Materials Express, Journal Name: Optical Materials Express Journal Issue: 11 Vol. 8; ISSN 2159-3930
Publisher:
Optical Society of America (OSA)Copyright Statement
Country of Publication:
United States
Language:
English

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